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图案化c面氮化镓衬底条纹上氮化镓的生长行为

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.

作者信息

Wu Peng, Liu Jianping, Jiang Lingrong, Hu Lei, Ren Xiaoyu, Tian Aiqin, Zhou Wei, Ikeda Masao, Yang Hui

机构信息

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

出版信息

Nanomaterials (Basel). 2022 Jan 29;12(3):478. doi: 10.3390/nano12030478.

DOI:10.3390/nano12030478
PMID:35159822
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8839455/
Abstract

Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.

摘要

本文研究了图案化氮化镓衬底上氮化镓的生长行为。在错切诱导的原子台阶消失后，观察到了螺旋生长和成核生长。通过引入临界过饱和度的多核化机制解释了不同温度下成核生长的形态。基于台阶运动模型的模拟结果成功地解释了条纹上的生长行为。这些发现可应用于控制在图案化衬底上生长的器件（如激光二极管）的表面动力学。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/fbd55f92fdc5/nanomaterials-12-00478-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/96849499f0ab/nanomaterials-12-00478-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/f11cb6efbfeb/nanomaterials-12-00478-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/4123b3934d09/nanomaterials-12-00478-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/8b97cff751e2/nanomaterials-12-00478-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/6b2f6aca1747/nanomaterials-12-00478-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/fb3110365dd8/nanomaterials-12-00478-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/74f7e176bf15/nanomaterials-12-00478-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/9cc6f570e0af/nanomaterials-12-00478-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/8eae1c46ca11/nanomaterials-12-00478-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/fbd55f92fdc5/nanomaterials-12-00478-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/96849499f0ab/nanomaterials-12-00478-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/f11cb6efbfeb/nanomaterials-12-00478-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/4123b3934d09/nanomaterials-12-00478-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/8b97cff751e2/nanomaterials-12-00478-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/6b2f6aca1747/nanomaterials-12-00478-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/fb3110365dd8/nanomaterials-12-00478-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/74f7e176bf15/nanomaterials-12-00478-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/9cc6f570e0af/nanomaterials-12-00478-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/8eae1c46ca11/nanomaterials-12-00478-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d54e/8839455/fbd55f92fdc5/nanomaterials-12-00478-g010.jpg

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本文引用的文献

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On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si.在硅衬底上生长的基于氮化铟镓的激光二极管的腔镜的晶圆级制造。
Sci Rep. 2018 May 21;8(1):7922. doi: 10.1038/s41598-018-26305-8.
2
Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface.在无台阶 GaN 表面上的超薄 InN 单量子阱中获得极窄的紫光光致发光线。
Adv Mater. 2012 Aug 16;24(31):4296-300. doi: 10.1002/adma.201200871. Epub 2012 Jun 8.