Okhay Olena, Vilarinho Paula M, Tkach Alexander
TEMA-Centre for Mechanical Technology and Automation, Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro, Portugal.
Department of Materials and Ceramic Engineering, CICECO-Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal.
Materials (Basel). 2022 Jan 23;15(3):859. doi: 10.3390/ma15030859.
The voltage dependence of the dielectric permittivity ' and the low dielectric loss tan of incipient ferroelectrics have drawn vast attention to the use of these materials for the development of tuning elements in electronics and telecommunications. Here, we study the DC electric field dependence of low-temperature ' in ~320 nm thick sol-gel-derived SrTiZnO thin films with x = 0.01 and 0.05, deposited on Pt/TiO/SiO/Si substrates. Incorporation of Zn onto Ti sites is found to decrease ' compared to undoped SrTiO films, while increasing the relative tunability up to ~32.9% under a DC electric field of 125 kV/cm at low temperatures. The hysteresis-free variation in ' with electric field and tan values below 0.6% observed for SrTiZnO film with x = 0.01 make this compound more attractive for tunable device applications.
初始铁电体的介电常数的电压依赖性以及低介电损耗正切，使得这些材料在电子和电信领域用于开发调谐元件方面备受关注。在此，我们研究了在Pt/TiO/SiO/Si衬底上沉积的、厚度约为320 nm、x = 0.01和0.05的溶胶-凝胶法制备的SrTiZnO薄膜中低温下介电常数的直流电场依赖性。研究发现，与未掺杂的SrTiO薄膜相比，在Ti位点掺入Zn会降低介电常数，同时在低温下125 kV/cm的直流电场下，相对调谐率提高到约32.9%。对于x = 0.01的SrTiZnO薄膜，观察到介电常数随电场的无滞后变化以及正切值低于0.6%，这使得该化合物在可调谐器件应用中更具吸引力。
