Ricciardulli Antonio Gaetano, Wang Ye, Yang Sheng, Samorì Paolo
University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France.
Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01069 Dresden, Germany.
J Am Chem Soc. 2022 Mar 2;144(8):3660-3666. doi: 10.1021/jacs.1c12931. Epub 2022 Feb 18.
The synthesis of novel two-dimensional (2D) materials displaying an unprecedented composition and structure via the exfoliation of layered systems provides access to uncharted properties. For application in optoelectronics, a vast majority of exfoliated 2D semiconductors possess n-type or more seldom ambipolar characteristics. The shortage of p-type 2D semiconductors enormously hinders the extensive engineering of 2D devices for complementary metal oxide semiconductors (CMOSs) and beyond CMOS applications. However, despite the recent progress in the development of 2D materials endowed with p-type behaviors by direct synthesis or p-doping strategies, finding new structures is still of primary importance. Here, we report the sonication-assisted liquid-phase exfoliation of violet phosphorus (VP) crystals into few-layer-thick flakes and the first exploration of their electrical and optical properties. Field-effect transistors based on exfoliated VP thin films exhibit a p-type transport feature with an / ratio of 10 and a hole mobility of 2.25 cm V s at room temperature. In addition, the VP film-based photodetectors display a photoresponsivity () of 10 mA W and a response time down to 0.16 s. Finally, VP embedded into CMOS inverter arrays displays a voltage gain of ∼17. This scalable production method and high quality of the exfoliated material combined with the excellent optoelectronic performances make VP an enticing and versatile p-type candidate for next-generation more-than-Moore (opto)electronics.
通过层状体系的剥离来合成具有前所未有的组成和结构的新型二维（2D）材料，能够获得未知的特性。对于光电子应用而言，绝大多数剥离的二维半导体具有n型特性，或者更少见的双极性特性。p型二维半导体的短缺极大地阻碍了用于互补金属氧化物半导体（CMOS）及超越CMOS应用的二维器件的广泛工程化。然而，尽管最近在通过直接合成或p型掺杂策略开发具有p型行为的二维材料方面取得了进展，但寻找新结构仍然至关重要。在此，我们报道了通过超声辅助液相剥离将紫磷（VP）晶体剥离成几层厚的薄片，并首次探索了它们的电学和光学性质。基于剥离的VP薄膜的场效应晶体管在室温下表现出p型传输特性，/比为10，空穴迁移率为2.25 cm² V⁻¹ s⁻¹。此外，基于VP薄膜的光电探测器显示出10 mA W⁻¹的光响应度（）和低至0.16 s的响应时间。最后，嵌入CMOS反相器阵列中的VP显示出约17的电压增益。这种可扩展的生产方法、剥离材料的高质量以及优异的光电性能，使得VP成为下一代超越摩尔（光）电子学中极具吸引力且通用的p型候选材料。
