Das Nayan C, Kim Minjae, Rani Jarnardhanan R, Hong Sung-Min, Jang Jae-Hyung
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea.
School of Energy Engineering, Korea Institute of Energy Technology, Naju 58330, South Korea.
Nanoscale. 2022 Mar 10;14(10):3738-3747. doi: 10.1039/d1nr05887h.
This study investigates the temperature-independent switching characteristics of magnesium fluoride (MgF) based bipolar resistive memory devices at temperatures ranging from 300 K down to 77 K. Filament type resistive switching at the interface of Ti/MgF and the trap-controlled space charge limited conduction (SCLC) mechanism in the bulk MgF layer are confirmed. The experimental results indicate that the operating environment and temperature critically control the resistive switching performance by varying the non-stoichiometry of the amorphous MgF active layer and Ti/MgF interface region. The gaseous atmosphere (open air or vacuum) affects device performances such as the electroforming process, on-state current, off-state current, on/off ratio, SET/RESET voltage and endurance of resistive-switching memory devices. After electroforming, the device performance is independent of temperature variation. The Ti/MgF/Pt memory devices show promising data retention for >10 s in a vacuum at room temperature and 77 K with the DC endurance property for more than 150 cycles at 77 K. The devices have great potential for future temperature-independent electronic applications.
本研究调查了基于氟化镁（MgF）的双极电阻式存储器件在300 K至77 K温度范围内与温度无关的开关特性。证实了在Ti/MgF界面处的丝状电阻开关以及块状MgF层中的陷阱控制空间电荷限制传导（SCLC）机制。实验结果表明，操作环境和温度通过改变非晶态MgF活性层和Ti/MgF界面区域的非化学计量比来严格控制电阻开关性能。气态气氛（空气或真空）会影响诸如电形成过程、导通态电流、截止态电流、开/关比、设置/重置电压以及电阻开关存储器件的耐久性等器件性能。电形成后，器件性能与温度变化无关。Ti/MgF/Pt存储器件在室温真空和77 K下显示出超过10 s的良好数据保持能力，在77 K下具有超过150次循环的直流耐久性特性。这些器件在未来与温度无关的电子应用中具有巨大潜力。
