Chatterjee Avijit, Selvaraja Shankar Kumar
Appl Opt. 2022 Feb 20;61(6):1403-1412. doi: 10.1364/AO.450621.
We present an on-chip photodetector integrated wavelength filter on a SiN-on-silicon-on-insulator (SOI) platform in the 850 nm wavelength window. The wavelength filter is designed using an echelle grating with a distributed Bragg reflector as the grating reflectors. We present the design and experimental realization of a six-channel wavelength filter with a channel spacing of 10 nm. Experimentally, we achieve an insertion loss of 4.3 dB and an adjacent channel cross talk of 22 dB. We demonstrate a silicon nano-slab waveguide integrated metal-semiconductor-metal photodetector with a maximum responsivity of 0.56 A/W and dark current of 217 nA. Furthermore, we demonstrate the integration of the echelle grating with the detector and show the feasibility of a CMOS compatible SiN-on-SOI platform for various applications, including short-reach communication and sensing applications.
我们展示了一种基于绝缘体上硅(SOI)平台上的氮化硅(SiN)的片上光电探测器集成波长滤波器,其工作在850 nm波长窗口。该波长滤波器采用带有分布式布拉格反射器作为光栅反射镜的阶梯光栅进行设计。我们展示了一种通道间距为10 nm的六通道波长滤波器的设计与实验实现。实验中,我们实现了4.3 dB的插入损耗和22 dB的相邻通道串扰。我们展示了一种硅纳米平板波导集成金属 - 半导体 - 金属光电探测器,其最大响应度为0.56 A/W,暗电流为217 nA。此外,我们展示了阶梯光栅与探测器的集成,并证明了用于包括短距离通信和传感应用在内的各种应用的CMOS兼容SOI上SiN平台的可行性。