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通过机械合金化制备用于大功率半导体器件芯片连接的银铟合金焊膏

Development of Ag-In Alloy Pastes by Mechanical Alloying for Die Attachment of High-Power Semiconductor Devices.

作者信息

Tsai Chin-Hao, Huang Wei-Chen, Kao Chengheng Robert

机构信息

Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.

Advanced Research Center for Green Materials Science & Technology, National Taiwan University, Taipei 10617, Taiwan.

出版信息

Materials (Basel). 2022 Feb 14;15(4):1397. doi: 10.3390/ma15041397.

Abstract

Sintered silver paste is widely used as the die-attachment material for power semiconductors. However, sintered silver joints encounter problems, such as severe coarsening of sintered pores and oxidation issues, in harsh high-temperature environments. These lead to the deterioration of the die-attachment joints. In this paper, a novel method of sintering silver joints is demonstrated, where silver-indium alloy paste is used to improve the reliability of sintered Ag joints. The silver-indium (Ag-In) alloy paste was fabricated through mechanical alloying using the ball-milling technique. The well-bonded sintered Ag-In alloy joints inhibited pore coarsening better than pure sintered Ag joints and significantly enhanced the mechanical properties at high operating temperatures. Lastly, an oxidation mechanism for the sintered joint was proposed, and strategies to prevent such high-temperature oxidation were discussed.

摘要

烧结银浆被广泛用作功率半导体的芯片附着材料。然而,在恶劣的高温环境下,烧结银接头会遇到诸如烧结孔隙严重粗化和氧化问题等,这些会导致芯片附着接头性能恶化。本文展示了一种烧结银接头的新方法,即使用银铟合金浆料来提高烧结银接头的可靠性。银铟(Ag-In)合金浆料是通过球磨技术的机械合金化制备的。良好结合的烧结Ag-In合金接头比纯烧结银接头能更好地抑制孔隙粗化,并在高工作温度下显著提高机械性能。最后,提出了烧结接头的氧化机制,并讨论了防止此类高温氧化的策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8320/8874830/709ac4ee6b71/materials-15-01397-g001.jpg

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