Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Small. 2022 Apr;18(16):e2200185. doi: 10.1002/smll.202200185. Epub 2022 Feb 26.
The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well-crystallized two-dimensional (2D) h-BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag between h-BN interlayer, is developed. The BN-DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN-DM to a self-made triboelectric nanogenerator (TENG), a self-power mechano-nociceptor system, which can successfully mimic the important nociceptor features of "threshold", "relaxation" and "allodynia" is designed.
在导电丝（CFs）形成过程中，离子/原子运动的固有随机性引起的切换可变性在很大程度上限制了扩散型忆阻器（DMs）的应用，包括人工神经元、神经形态计算和人工感觉系统。在这项研究中，开发了一种基于结晶良好的二维（2D）h-BN 的 DM 器件，该器件具有改进的器件均匀性，由于 Ag 在 h-BN 层间的高迁移势垒，可将 CFs 的形成从三维限制到二维。BN-DM 具有潜在的可排列特征，器件产量高达 88%，可用于构建用于数字模式识别的储层计算系统，准确率高达 96%，并可用作人工伤害感受器来感知外部有害刺激，并模拟重要的生物伤害感受器特性。通过将 BN-DM 连接到自制的摩擦纳米发电机（TENG），设计了一种自供电的机械伤害感受器系统，该系统可以成功模拟“阈值”、“弛豫”和“痛觉过敏”等重要伤害感受器特性。
