Laboratoire de Conception et d'Intégration des Systèmes, Grenoble INP, Université Grenoble Alpes, 26902, Valence, France.
Department of Communications and Information Technology, Universitat Pompeu Fabra, 08018, Barcelona, Spain.
Sci Rep. 2022 Mar 8;12(1):4105. doi: 10.1038/s41598-022-08127-x.
Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is to adapt a conventional CBRAM based memory cell to be used as an RF switch, and to demonstrate the feasibility of programming non-volatile RF CBRAM switches to achieve specific target resistances within a range of continuous values. The memory-RF technologic transition implies a drastic increase of the geometry in order to handle a much higher power, a decrease of the transition capacitance in order to operate at much higher frequencies, and a decrease of the LRS to a few ohms, which is critical for RF applications. These studies are initially performed on an in-house made RF CBRAM cell array at DC frequency, and then extended successfully to a co-planar waveguide (CPW) based shunt mode RF switch with an integrated CBRAM cell. Reliability of the proposed technique is validated through detailed analysis of factors like repeatability of the process, time stability of programmed states, and statistics of time taken to converge to a desired resistance value for an arbitrary RF CBRAM switch.
电电阻控制编程的导电桥接随机存取存储器（CBRAM）射频（RF）开关可以受益于发展的电子控制非易失性 RF 衰减器和其他可重构器件。本研究的目的是适应传统的 CBRAM 为基础的存储单元用作 RF 开关，并演示编程非易失性 RF CBRAM 开关的可行性，以实现特定目标电阻范围内的连续值。内存-RF 技术的过渡意味着急剧增加的几何形状，以处理更高的功率，降低过渡电容，以操作在更高的频率，和减少 LRS 几个欧姆，这是关键的 RF 应用。这些研究最初在一个内部制作的 RF CBRAM 单元阵列在直流频率，然后成功扩展到一个共面波导（CPW）为基础的分流模式 RF 开关与集成的 CBRAM 单元。该技术的可靠性通过详细分析的因素，如过程的重复性，编程状态的时间稳定性，和时间的统计数据来收敛到一个任意的 RF CBRAM 开关的期望的电阻值。
