通过TaO/TaO双层结构抑制导电桥随机存取存储器中的细丝过度生长

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by TaO/TaO Bi-Layer Structure.

作者信息

Yu Jie, Xu Xiaoxin, Gong Tiancheng, Luo Qing, Dong Danian, Yuan Peng, Tai Lu, Yin Jiahao, Zhu Xi, Wu Xiulong, Lv Hangbing, Liu Ming

机构信息

Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

School of Electronics and Information Engineering, Anhui University, Hefei, Anhui, China.

出版信息

Nanoscale Res Lett. 2019 Mar 28;14(1):111. doi: 10.1186/s11671-019-2942-x.

DOI:10.1186/s11671-019-2942-x

PMID:30923974

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6439017/

Abstract

Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a TaO/TaO bi-layer structure by using a low-temperature annealing process. The addition of a TaO layer acted as an external resistance suppressing the overflow current during set programming, thus achieving the self-compliance switching. As a result, the distributions of high-resistance states and low-resistance states are improved due to the suppression of the overset phenomenon. In addition, the LRS retention of the CBRAM is obviously enhanced due to the recovery of defects in the switching film. This work provides a simple and economical method to improve the reliability of CBRAM.

摘要

双层结构已被广泛采用来提高导电桥随机存取存储器（CBRAM）的可靠性。在这项工作中，我们提出了一种便捷且经济的解决方案，即通过低温退火工艺实现TaO/TaO双层结构。添加TaO层作为外部电阻，可抑制设置编程期间的溢出电流，从而实现自顺应开关。结果，由于抑制了过设置现象，高电阻状态和低电阻状态的分布得到改善。此外，由于开关膜中缺陷的恢复，CBRAM的低电阻状态保持能力明显增强。这项工作提供了一种简单且经济的方法来提高CBRAM的可靠性。