Kim Suyeon, Lee Seung-Hun, Jo In Ho, Seo Jongsu, Yoo Yeong-Eun, Kim Jeong Hwan
Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
Sci Rep. 2022 Mar 24;12(1):5124. doi: 10.1038/s41598-022-09054-7.
Thin films grown via atomic layer deposition (ALD) suffer from insufficient growth rate and unreliability for temperature-sensitive electronic substrates. This study aimed to examine the growth characteristics and dielectric strength of ALD AlO films grown at low temperatures (≤ 150 °C) for potential application in flexible electronic devices. The growth rate of the AlO films increased from 0.9 to 1.1 Å/cycle with increasing temperature and saturated at growth temperatures ≥ 150 °C, which is the critical temperature at which a complete oxidation reaction occurred. The dielectric strength was also improved with increasing growth temperature, and the films grown at 150 °C showed a high breakdown field strength (~ 8.3 MV/cm), attributable to the decrease in the carbon impurities and oxygen defects, as confirmed by X-ray photoelectron spectroscopy. Even at low growth temperatures (≤ 150 °C), ALD AlO films showed an overall amorphous structure and extremely smooth surfaces regardless of the growth temperature.
通过原子层沉积（ALD）生长的薄膜存在生长速率不足以及对于温度敏感的电子基板不可靠的问题。本研究旨在考察在低温（≤150°C）下生长的用于柔性电子器件潜在应用的ALD AlO薄膜的生长特性和介电强度。AlO薄膜的生长速率随着温度升高从0.9增加到1.1 Å/循环，并在生长温度≥150°C时达到饱和，150°C是发生完全氧化反应的临界温度。介电强度也随着生长温度升高而提高，在150°C生长的薄膜显示出高击穿场强（~8.3 MV/cm），这归因于碳杂质和氧缺陷的减少，这一点通过X射线光电子能谱得到证实。即使在低生长温度（≤150°C）下，ALD AlO薄膜无论生长温度如何都呈现出整体非晶结构和极其光滑的表面。
