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二维材料工程在忆阻器中的新魅力:当电子学遇到层状形态。

Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology.

机构信息

Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.

出版信息

Nanoscale Horiz. 2022 May 3;7(5):480-507. doi: 10.1039/d2nh00031h.

DOI:10.1039/d2nh00031h
PMID:35343522
Abstract

The family of two-dimensional (2D) materials composed of atomically thin layers connected van der Waals interactions has attracted much curiosity due to a variety of intriguing physical, optical, and electrical characteristics. The significance of analyzing statistics on electrical devices and circuits based on 2D materials is seldom underestimated. Certain requirements must be met to deliver scientific knowledge that is beneficial in the field of 2D electronics: synthesis and fabrication must occur at the wafer level, variations in morphology and lattice alterations must be visible and statistically verified, and device dimensions must be appropriate. The authors discussed the most recent significant concerns of 2D materials in the provided prose and attempted to highlight the prerequisites for synthesis, yield, and mechanism behind device-to-device variability, reliability, and durability benchmarking under memristors characteristics; they also indexed some useful approaches that have already been reported to be advantageous in large-scale production. Commercial applications, on the other hand, will necessitate further effort.

摘要

二维(2D)材料由原子薄层连接范德华相互作用组成,其具有各种有趣的物理、光学和电学特性,因此引起了人们的极大兴趣。分析基于 2D 材料的电子设备和电路的统计数据的重要性很少被低估。为了在 2D 电子学领域提供有益的科学知识,必须满足某些要求:必须在晶圆级进行合成和制造,形态和晶格变化必须可见且经过统计学验证,并且器件尺寸必须合适。作者在提供的散文中讨论了 2D 材料最近的重大关注点,并试图强调在忆阻器特性下合成、产量和器件间变异性、可靠性和耐久性基准测试背后的机制的前提条件;他们还列出了一些已经被报道在大规模生产中具有优势的有用方法。另一方面,商业应用将需要进一步的努力。

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