Guo Siyang, Qiao Shuang, Liu Jihong, Ma Jikui, Wang Shufang
Opt Express. 2022 Mar 28;30(7):11536-11548. doi: 10.1364/OE.453909.
In this paper, a CHNH(MA)PbBr/Si heterojunction photodetector (PD) is prepared, and a simple method is proposed to improve the performance by introducing an ITO conductive layer and modulating thickness of the MAPbBr layer. The results indicate that the MAPbBr/Si heterojunction PD exhibits an ultra-broadband photoresponse ranging from 405 to 1064 nm, and excellent performances with the responsivity (R) of 0.394 mA/W, detectivity (D) of 0.11×10 Jones, and response times of ∼2176/∼257 ms. When adding the ITO layer, the R and D are greatly improved to 0.426 A/W and 5.17×10 Jones, which gets an increment of 1.08×10% and 4.7×10%, respectively. Meanwhile, the response times are reduced to ∼130/∼125 ms, and a good environmental stability is obtained. Moreover, it is found that the photoresponse is strongly dependent on the thickness of the MAPbBr layer. By modulating the MAPbBr layer thickness from ∼85 to ∼590 nm, the performances are further improved with the best R of ∼0.87 A/W, D of ∼1.92×10 Jones, and response times of ∼129/∼130 ms achieved in the ∼215 nm-thick PD.
本文制备了一种CHNH(MA)PbBr/Si异质结光电探测器（PD），并提出了一种通过引入ITO导电层和调节MAPbBr层厚度来提高其性能的简单方法。结果表明，MAPbBr/Si异质结PD呈现出从405到1064 nm的超宽带光响应，具有0.394 mA/W的响应度（R）、0.11×10琼斯的探测率（D）和约2176/约257 ms的响应时间等优异性能。添加ITO层后，R和D大幅提高到0.426 A/W和5.17×10琼斯，分别提高了1.08×10%和4.7×10%。同时，响应时间缩短至约130/约125 ms，并获得了良好的环境稳定性。此外，发现光响应强烈依赖于MAPbBr层的厚度。通过将MAPbBr层厚度从约85 nm调节到约590 nm，在约215 nm厚的PD中实现了进一步的性能提升，最佳R约为0.87 A/W，D约为1.92×10琼斯，响应时间约为129/约130 ms。
