在轴向（001）GaP/Si上外延生长的电泵浦连续波1.3μm量子点激光器。

Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si.

作者信息

Liu Alan Y, Peters Jon, Huang Xue, Jung Daehwan, Norman Justin, Lee Minjoo L, Gossard Arthur C, Bowers John E

出版信息

Opt Lett. 2017 Jan 15;42(2):338-341. doi: 10.1364/OL.42.000338.

DOI:10.1364/OL.42.000338

Abstract

We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860 A/cm and 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA.

摘要

我们展示了首个在无切割或锗层的轴向（001）硅衬底上外延生长的电泵浦连续波（CW）III-V族半导体激光器，其使用InAs/GaAs量子点作为有源区，并在硅层和器件层之间设置了中间GaP缓冲层。对于同一器件，具有未镀膜面的宽面激光器在室温下实现了激射，阈值电流密度约为860 A/cm²，单面带输出功率为110 mW。为低阈值操作设计的脊形激光器显示出最高激射温度可达90°C，阈值低至30 mA。