Dodson J P, Ercan H Ekmel, Corrigan J, Losert Merritt P, Holman Nathan, McJunkin Thomas, Edge L F, Friesen Mark, Coppersmith S N, Eriksson M A
Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, California 90265, USA.
Phys Rev Lett. 2022 Apr 8;128(14):146802. doi: 10.1103/PhysRevLett.128.146802.
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
硅量子点中谷轨道态的能量由界面粗糙度、轨道限制和电子相互作用之间尚未完全理解的相互作用决定。在这里，我们报告了通过改变栅极电压来改变量子点电势时单电子和双电子谷轨道态能量的测量结果，并使用全组态相互作用计算来计算这些相同的能量。这些结果有助于理解各种物理贡献之间的相互作用，并为量子阱界面提供一种新的探测方法。
