Chai Jixing, Kong Deqi, Chen Sheng, Chen Liang, Wang Wengliang, Li Guoqiang
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China
School of Material Science and Engineering, South China University of Technology Guangzhou 510640 China.
RSC Adv. 2021 Jul 19;11(40):25079-25083. doi: 10.1039/d1ra04739f. eCollection 2021 Jul 13.
Due to the adjustable band gap, the excellent radiation stability, and the high electron mobility of InGaN, the InGaN-based blue-light photodetectors (PDs) show great potential in visible light communication (VLC) systems. However, the applications of InGaN-based blue-light PDs in VLC systems are limited by the poor performance caused by the poor crystalline quality of InGaN materials. Herein, we report on the fabrication of high responsivity and high response speed InGaN-based metal-semiconductor metal (MSM) blue-light PDs using high-quality InGaN epitaxial films grown on Si substrates by the combination of low-temperature pulsed laser deposition (LT-PLD) and high-temperature metal organic chemical deposition (HT-MOCVD). The technology can not only suppress the interfacial reactions between films and substrates by LT-PLD growth, but also promote the lateral overgrowth of InGaN and improve the crystalline quality of InGaN-based epitaxial films by HT-MOCVD growth. Based on the high-quality InGaN-based materials, high-performance InGaN-based blue-light PDs are fabricated accordingly with a high responsivity of 0.49 A W and a short rise/fall response time of 1.25/1.74 ms at an applied bias of -3 V. The performance is better than the results for the InGaN-based PDs previously reported. The InGaN-based blue-light PDs shed light on the potential for VLC system applications.
由于氮化铟镓（InGaN）具有可调节的带隙、出色的辐射稳定性和高电子迁移率，基于InGaN的蓝光光电探测器（PDs）在可见光通信（VLC）系统中显示出巨大潜力。然而，基于InGaN的蓝光PDs在VLC系统中的应用受到InGaN材料结晶质量差所导致的性能不佳的限制。在此，我们报告了通过低温脉冲激光沉积（LT-PLD）和高温金属有机化学沉积（HT-MOCVD）相结合的方法，在硅衬底上生长高质量InGaN外延膜，从而制造出高响应度和高响应速度的基于InGaN的金属-半导体-金属（MSM）蓝光PDs。该技术不仅可以通过LT-PLD生长抑制薄膜与衬底之间的界面反应，还可以通过HT-MOCVD生长促进InGaN的横向过度生长并提高基于InGaN的外延膜的结晶质量。基于高质量的InGaN基材料，相应地制造出了高性能的基于InGaN的蓝光PDs，在-3 V的施加偏压下，其具有0.49 A/W的高响应度和1.25/1.74 ms的短上升/下降响应时间。该性能优于先前报道的基于InGaN的PDs的结果。基于InGaN的蓝光PDs为VLC系统应用的潜力带来了曙光。
