Zheng Yulin, Wang Wenliang, Li Yuan, Lan Jianyu, Xia Yu, Yang Zhichao, He Xiaobin, Li Guoqiang
State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China.
Guangdong Choicore Optoelectronics Co. Ltd. , Heyuan 517003 , China.
ACS Appl Mater Interfaces. 2019 Apr 10;11(14):13589-13597. doi: 10.1021/acsami.9b00940. Epub 2019 Mar 27.
Integration of one-dimensional (1D) semiconductors with two-dimensional (2D) materials into hybrid systems is identified as promising applications for new optoelectronic and photodetection devices. Herein, a self-integrated hybrid ultraviolet (UV) photodetector based on InGaN nanorod arrays (NRAs) sandwiched between transparent top and back graphene contacts forming a Schottky junction has been demonstrated for the first time. The controlled van der Waals epitaxy of the vertically aligned InGaN NRA assembly on graphene-on-Si substrates is achieved by plasma-assisted molecular beam epitaxy. Moreover, the self-assembly formation mechanisms of InGaN NRAs on graphene are clarified by theoretical calculations with first-principles calculations based on density functional theory. The peculiar 1D/2D heterostructure hybrid system-based integrated UV photodetector simultaneously exhibits ultrafast response time (∼50 μs) and superhigh photosensitivity (∼10 A/W). It is highly believed that the concept proposed in this work has a great potential and can be widely applied for the next-generation integrated 1D/2D nano-based optoelectronic and photodetection devices.
将一维（1D）半导体与二维（2D）材料集成到混合系统中，被认为是新型光电器件和光探测器件的有前景的应用。在此，首次展示了一种基于夹在透明顶部和背面石墨烯触点之间形成肖特基结的氮化铟镓纳米棒阵列（NRA）的自集成混合紫外（UV）光电探测器。通过等离子体辅助分子束外延实现了垂直排列的氮化铟镓NRA组件在硅基石墨烯上的可控范德华外延。此外，基于密度泛函理论的第一性原理计算通过理论计算阐明了氮化铟镓NRA在石墨烯上的自组装形成机制。基于特殊的一维/二维异质结构混合系统的集成紫外光电探测器同时展现出超快响应时间（约50微秒）和超高灵敏度（约10 A/W）。人们高度相信这项工作中提出的概念具有巨大潜力，可广泛应用于下一代基于一维/二维纳米的集成光电器件和光探测器件。
