Sheoran Hardhyan, Fang Shi, Liang Fangzhou, Huang Zhe, Kaushik Shuchi, Manikanthababu Nethala, Zhao Xiaolong, Sun Haiding, Singh Rajendra, Long Shibing
Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India.
School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China.
ACS Appl Mater Interfaces. 2022 Nov 23;14(46):52096-52107. doi: 10.1021/acsami.2c08511. Epub 2022 Nov 8.
In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown β-GaO heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) of the order of 10 at zero bias and >10 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10 and 1.03 × 10 W/Hz and ultrahigh detectivity of 5.51 × 10 and 3.10 × 10 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV-visible (260:500 nm) rejection ratios of the order of 10 at zero bias and 10 at 5 V are obtained. These results demonstrate the potential of GaO-based DUV PDs for solar-blind detection applications that require high-temperature robustness.
在本文中，我们报道了在金属有机化学气相沉积（MOCVD）生长的β-GaO异质外延上制备的高性能深紫外光电探测器（DUV PDs），其在高达125°C的温度下仍能稳定工作。所制备的DUV PDs具有自供电特性，在零偏压下暗电流超低，为1.75 fA，光暗电流比（PDCR）非常高，在零偏压下约为10，在5 V和10 V的较高偏压下大于10，并且在高达125°C时几乎保持恒定。在室温（RT）下，在波长为260 nm、光照强度为42.86 μW/cm²的弱光照下，10 V偏压时获得了6.62 A/W的高响应度。该探测器在0 V和5 V时分别显示出极低的噪声等效功率（NEP），为5.74×10⁻¹³ W/Hz和1.03×10⁻¹² W/Hz，以及超高的探测率，分别为5.51×10¹²和3.10×10¹² Jones，这表明其具有高探测灵敏度。在零偏压下获得了约10⁵的室温紫外-可见（260:500 nm）抑制比，在5 V时为10⁴。这些结果证明了基于GaO的DUV PDs在需要高温稳定性的日盲探测应用中的潜力。
