高质量ZnO/ZnMgO多量子阱有源层发光二极管的紫外电致发光发射
UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes.
作者信息
Chen Shanshan, Zhan Tengrun, Pan Xinhua, He Haiping, Huang Jingyun, Lu Bin, Ye Zhizhen
机构信息
School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 People's Republic of China.
Guangdong Provincial Key Laboratory of Information Photonics Technology Guangzhou 510006 People's Republic of China.
出版信息
RSC Adv. 2021 Dec 6;11(62):38949-38955. doi: 10.1039/d1ra06685d.
5-period ZnO/ZnMgO multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.
采用5周期的ZnO/ZnMgO多量子阱（MQWs）作为有源层，通过分子束外延法制备了p-GaN/MQWs/n-ZnO二极管。该二极管在室温下表现出约370nm的高效紫外发射。计算得到的能带结构和载流子分布表明，电子被限制溢出到p型层，载流子被限制在高质量的MQWs阱层中。
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