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高质量ZnO/ZnMgO多量子阱有源层发光二极管的紫外电致发光发射

UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes.

作者信息

Chen Shanshan, Zhan Tengrun, Pan Xinhua, He Haiping, Huang Jingyun, Lu Bin, Ye Zhizhen

机构信息

School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 People's Republic of China.

Guangdong Provincial Key Laboratory of Information Photonics Technology Guangzhou 510006 People's Republic of China.

出版信息

RSC Adv. 2021 Dec 6;11(62):38949-38955. doi: 10.1039/d1ra06685d.

DOI:10.1039/d1ra06685d
PMID:35492489
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9044243/
Abstract

5-period ZnO/ZnMgO multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.

摘要

采用5周期的ZnO/ZnMgO多量子阱（MQWs）作为有源层，通过分子束外延法制备了p-GaN/MQWs/n-ZnO二极管。该二极管在室温下表现出约370nm的高效紫外发射。计算得到的能带结构和载流子分布表明，电子被限制溢出到p型层，载流子被限制在高质量的MQWs阱层中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/acdf0d1003ec/d1ra06685d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/9a5cacd32fce/d1ra06685d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/80776d45e250/d1ra06685d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/319c68839f92/d1ra06685d-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/fd8ffb52d6a1/d1ra06685d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/acdf0d1003ec/d1ra06685d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/9a5cacd32fce/d1ra06685d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/80776d45e250/d1ra06685d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/319c68839f92/d1ra06685d-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/fd8ffb52d6a1/d1ra06685d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7e0/9044243/acdf0d1003ec/d1ra06685d-f5.jpg

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Nanoscale. 2018 Oct 21;10(39):18774-18785. doi: 10.1039/c8nr05559a. Epub 2018 Oct 2.
2
Enhanced ultraviolet emission of MgZnO/ZnO multiple quantum wells light-emitting diode by p-type MgZnO electron blocking layer.通过p型MgZnO电子阻挡层增强MgZnO/ZnO多量子阱发光二极管的紫外发射
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3
Prospects of III-nitride optoelectronics grown on Si.
硅衬底 III 族氮化物光电材料的发展前景。
Rep Prog Phys. 2013 Oct;76(10):106501. doi: 10.1088/0034-4885/76/10/106501. Epub 2013 Oct 3.
4
Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability.基于 p-GaN/n-ZnO 纳米棒的紫蓝色发光二极管及其稳定性。
Nanotechnology. 2011 Jun 17;22(24):245202. doi: 10.1088/0957-4484/22/24/245202. Epub 2011 Apr 21.
5
The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes.结构缺陷在基于氮化铟镓的蓝光发光二极管和激光二极管中的作用。
Science. 1998 Aug 14;281(5379):955-61. doi: 10.1126/science.281.5379.956.