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聚乙烯亚胺吸附和压力影响下单层MoS的电学和光学性质

Electronic and optical properties of monolayer MoS under the influence of polyethyleneimine adsorption and pressure.

作者信息

Le Ong Kim, Chihaia Viorel, Pham-Ho My-Phuong, Son Do Ngoc

机构信息

Ho Chi Minh City University of Technology, VNU-HCM 268 Ly Thuong Kiet Street, District 10 Ho Chi Minh City Vietnam

Institute of Physical Chemistry "Ilie Murgulescu" of the Romanian Academy Splaiul Independentei 202, Sector 6 060021 Bucharest Romania.

出版信息

RSC Adv. 2020 Jan 27;10(8):4201-4210. doi: 10.1039/c9ra09042h. eCollection 2020 Jan 24.

Abstract

MoS is one of the well-known transition metal dichalcogenides. The moderate bandgap of monolayer MoS is fascinating for the new generation of optoelectronic devices. Unfortunately, MoS is sensitive to gases in the environment causing its original electronic properties to be modified unexpectedly. This problem has been solved by coating MoS with polymers such as polyethyleneimine (PEI). Furthermore, the application of pressure is also an effective method to modify the physical properties of MoS. However, the effects of polyethyleneimine and pressure on the electronic and optical properties of monolayer MoS remain unknown. Therefore, we elucidated this matter by using density functional theory calculations. The results showed that the adsorption of the PEI molecule significantly reduces the width of the direct bandgap of the monolayer MoS to 0.55 eV because of the occurrence of the new energy levels in the bandgap region due to the contribution of the N-2p state of the PEI molecule. Remarkably, the transition from semiconductor to metal of the monolayer MoS and the MoS/PEI system occurs at the tensile pressure of 24.95 and 21.79 GPa, respectively. The bandgap of these systems approaches 0 eV at the corresponding pressures. Importantly, new peaks in the optical spectrum of the clean MoS and MoS/PEI appear in the ultraviolet region under compressive pressures and the infrared region under tensile strains.

摘要

二硫化钼(MoS)是著名的过渡金属二硫属化物之一。单层二硫化钼适度的带隙对新一代光电器件具有吸引力。不幸的是,二硫化钼对环境中的气体敏感,会意外改变其原始电子特性。通过用聚乙烯亚胺(PEI)等聚合物包覆二硫化钼,这个问题已得到解决。此外,施加压力也是改变二硫化钼物理性质的有效方法。然而,聚乙烯亚胺和压力对单层二硫化钼的电子和光学性质的影响仍然未知。因此,我们通过密度泛函理论计算阐明了这一问题。结果表明,由于聚乙烯亚胺分子的N - 2p态的贡献,在带隙区域出现了新的能级,聚乙烯亚胺分子的吸附显著降低了单层二硫化钼的直接带隙宽度至0.55电子伏特。值得注意的是,单层二硫化钼和二硫化钼/聚乙烯亚胺体系分别在24.95吉帕和21.79吉帕的拉伸压力下发生从半导体到金属的转变。在相应压力下,这些体系的带隙接近0电子伏特。重要的是,纯净二硫化钼和二硫化钼/聚乙烯亚胺的光谱在压缩压力下的紫外区域以及拉伸应变下的红外区域出现新的峰。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fe5f/9049067/147a7f2540f9/c9ra09042h-f1.jpg

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