Chen Liufang, Cheng Zhihao, Xu Wenting, Meng Xiangjian, Yuan Guoliang, Liu Junming, Liu Zhiguo
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083, P. R. China.
Sci Rep. 2016 Jan 11;6:19092. doi: 10.1038/srep19092.
Ferroelectric polarization switching and its domain evolution play a key role on the macroscopic electric properties of ferroelectric or piezoelectric devices. Mechanical switching has been reported recently in ~5 nm BaTiO3 and PbZr0.2Ti0.8O3 epitaxial films; however it is still a challenge for a mechanical force to switch polarization of a slightly thicker film in the same way as an electric field. Here, we report that the polarization of a 70 nm BiFeO3 epitaxial film can be completely switched by a mechanical force, and its domain evolution is similar to that observed with electrical switching. With the gradual increase of the field/force, new domains nucleate preferentially at domain boundaries, the μm-size domains commonly decompose to a mass of nm-size domains, and finally they may reorganize to μm-size domains which undergo 180(°) polarization switching through multi steps. Importantly, the complete mechanical switching of polarization was also established in the (0 0 1) film with a smooth surface. Furthermore, either upward or downward polarization can be read out nondestructively by a constant current. Our study sheds light on prospective applications of ferroelectrics in the absence of an electric field, such as memory devices and other micro-electromechanical systems.
铁电极化切换及其畴演化对铁电或压电器件的宏观电学性质起着关键作用。最近在约5 nm的BaTiO3和PbZr0.2Ti0.8O3外延薄膜中报道了机械切换;然而,对于稍厚一些的薄膜,用机械力像电场那样切换极化仍然是一个挑战。在此,我们报道70 nm的BiFeO3外延薄膜的极化可以通过机械力完全切换,并且其畴演化与电切换时观察到的类似。随着场/力的逐渐增加,新畴优先在畴界处形核,微米尺寸的畴通常分解为大量纳米尺寸的畴,最后它们可能重新组织为微米尺寸的畴,这些畴通过多步经历180(°)极化切换。重要的是,在具有光滑表面的(0 0 1)薄膜中也实现了极化的完全机械切换。此外,通过恒定电流可以无损地读出向上或向下的极化。我们的研究为铁电体在无电场情况下的潜在应用提供了启示,例如存储器件和其他微机电系统。