Zhang Li, Minegishi Tsutomu, Nakabayashi Mamiko, Suzuki Yohichi, Seki Kazuhiko, Shibata Naoya, Kubota Jun, Domen Kazunari
Department of Chemical System Engineering , The University of Tokyo , 7-3-1 Hongo , Bunkyo-ku , Tokyo 113-8656 , Japan . Email:
Institute of Engineering Innovation , The University of Tokyo , 2-11-16 Yayoi , Bunkyo-ku , Tokyo 113-8656 , Japan.
Chem Sci. 2015 Feb 1;6(2):894-901. doi: 10.1039/c4sc02346c. Epub 2014 Sep 4.
The photoelectrochemical properties of (Ag,Cu)GaSe (ACGSe) modified by deposition of CdS and CuGaSe layers were investigated. The CdS and CuGaSe layers formed p-n junctions with an appropriate band diagram on the surface of the electrode and they clearly increased the cathodic photocurrent and onset potential. The Pt, CdS, and CuGaSe modified ACGSe (Pt/CdS/CuGaSe/ACGSe) with an appropriate thickness of CuGaSe layers ( 100 nm) showed a cathodic photocurrent of 8.79 mA cm at 0 V and an onset potential of 0.62 V (defined as cathodic photocurrent of 1.0 mA cm) under simulated sunlight irradiation in 0.1 M NaHPO (pH 10). Pt/CdS/CuGaSe/ACGSe showed durable cathodic current under the observed reaction conditions and hydrogen was evolved for about 20 days.
研究了通过沉积CdS和CuGaSe层改性的(Ag,Cu)GaSe(ACGSe)的光电化学性质。CdS和CuGaSe层在电极表面形成了具有合适能带图的p-n结,它们显著增加了阴极光电流和起始电位。具有合适厚度(100 nm)CuGaSe层的Pt、CdS和CuGaSe改性ACGSe(Pt/CdS/CuGaSe/ACGSe)在0.1 M NaHPO(pH 10)的模拟太阳光照射下,在0 V时显示出8.79 mA cm的阴极光电流,起始电位为0.62 V(定义为阴极光电流为1.0 mA cm)。Pt/CdS/CuGaSe/ACGSe在观察到的反应条件下显示出持久的阴极电流,并且氢气析出约20天。