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氮化硼-石墨烯纳米电容器中电容随尺寸异常增加的起源。

Origin of the anomalous size-dependent increase of capacitance in boron nitride-graphene nanocapacitors.

作者信息

Ciftja Orion

机构信息

Department of Physics, Prairie View A&M University Prairie View TX 77446 USA

出版信息

RSC Adv. 2019 Mar 11;9(14):7849-7853. doi: 10.1039/c9ra00614a. eCollection 2019 Mar 6.

Abstract

The anomalous size-dependent increase in capacitance in boron nitride-graphene nanocapacitors is a puzzle that has been initially attributed to the negative quantum capacitance exhibited by this particular materials system. However, we show in this work that the anomalous nanocapacitance of this system is not due to quantum effects but has pure electrostatic origin and can be explained by a parallel-plate (square) nanocapacitor model filled with a dielectric film characterized by a size/thickness-dependent relative permittivity. The model presented here is in excellent agreement with the experimentally measured capacitance values of recently fabricated graphene and hexagonal boron nitride nanocapacitors. The results obtained seem to suggest that the size-dependent increase of capacitance in the above-mentioned family of nanocapacitors can be explained by classical finite-size geometric electrostatic effects.

摘要

氮化硼-石墨烯纳米电容器中电容随尺寸异常增加是一个谜题,最初被归因于该特定材料系统所表现出的负量子电容。然而,我们在这项工作中表明,该系统的异常纳米电容并非源于量子效应,而是具有纯粹的静电起源,并且可以通过一个填充有介电膜的平行板(方形)纳米电容器模型来解释,该介电膜的相对介电常数与尺寸/厚度有关。这里提出的模型与最近制备的石墨烯和六方氮化硼纳米电容器的实验测量电容值高度吻合。所获得的结果似乎表明,上述纳米电容器家族中电容随尺寸的增加可以用经典的有限尺寸几何静电效应来解释。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d4cf/9061265/5448bf0cf7f3/c9ra00614a-f1.jpg

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