Ding Su, Tian Yanhong
College of Materials and Environmental Engineering, Hangzhou Dianzi University 310018 Hangzhou P. R. China.
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology Harbin 150001 China
RSC Adv. 2019 Aug 28;9(46):26961-26980. doi: 10.1039/c9ra04404c. eCollection 2019 Aug 23.
Research on next-generation transparent electrode (TE) materials to replace expensive and fragile indium tin oxide (ITO) is crucial for future electronics. Copper nanowires (Cu NWs) are considered as one of the most promising alternatives due to their excellent electrical properties and low-cost processing. This review summarizes the recent progress on the synthesis methods of long Cu NWs, and the fabrication techniques and protection measures for Cu NW TEs. Applications of Cu NW TEs in electronics, such as solar cells, touch screens, and light emitting diodes (LEDs), are discussed.
研究用于取代昂贵且易碎的氧化铟锡(ITO)的下一代透明电极(TE)材料对未来电子学至关重要。铜纳米线(Cu NWs)因其优异的电学性能和低成本加工工艺而被认为是最有前途的替代材料之一。本文综述了长铜纳米线合成方法、铜纳米线透明电极的制备技术和保护措施的最新进展。还讨论了铜纳米线透明电极在电子学中的应用,如太阳能电池、触摸屏和发光二极管(LED)。