Kumar Mohit, Kim Hong-Sik, Park Dae Young, Jeong Mun Seok, Kim Joondong
Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University 119 Academy Rd. Yeonsu Incheon 22012 Republic of Korea
Department of Electrical Engineering, Incheon National University 119 Academy Rd. Yeonsu Incheon 22012 Republic of Korea.
RSC Adv. 2018 Jun 26;8(41):23206-23212. doi: 10.1039/c8ra02825g. eCollection 2018 Jun 21.
Perovskite-based hybrid organic-inorganic devices have recently demonstrated high potential in optoelectronics. Yet, the preparation of perovskite-based photodetectors over a desired scale without any complex architecture is still challenging. Herein, we proposed a new CHNHPbI/SnS hybrid planar broadband (365 to 850 nm) photodetector, having a wide channel length of 6 mm. The growth of the device was studied by utilizing scanning electron microscopy, energy-dispersive X-ray mapping, X-ray diffraction, and optical spectroscopies. Furthermore, the efficient charge transfer from CHNHPbI to SnS was confirmed by employing time-correlated single photon counting. The pure SnS device generates 0.05 μA photocurrent at 365 nm, 4 mW cm, which is notably enhanced 140 times after embedding with CHNHPbI. Further, the hybrid device shows a significant photoresponse even below the band gaps of individual CHNHPbI or SnS, which matches well with the density functional theory prediction. The observed results will create new opportunities to develop and design a low-cost, broadband, and efficient photodetector over a chosen horizontal area.
基于钙钛矿的有机-无机器件最近在光电子学领域展现出了巨大潜力。然而，在不采用任何复杂结构的情况下，制备出所需尺寸的基于钙钛矿的光电探测器仍然具有挑战性。在此，我们提出了一种新型的CHNHPbI/SnS混合平面宽带（365至850纳米）光电探测器，其沟道长度达6毫米。利用扫描电子显微镜、能量色散X射线映射、X射线衍射和光谱学对该器件的生长过程进行了研究。此外，通过时间相关单光子计数证实了从CHNHPbI到SnS的有效电荷转移。纯SnS器件在365纳米、4毫瓦/平方厘米的光照下产生0.05微安的光电流，在嵌入CHNHPbI后显著增强了140倍。此外，该混合器件即使在单个CHNHPbI或SnS的带隙以下也表现出显著的光响应，这与密度泛函理论预测结果吻合良好。这些观测结果将为在选定的水平区域开发和设计低成本、宽带且高效的光电探测器创造新机遇。
