用于高灵敏度深紫外光电探测器应用的石墨烯-β-Ga2O3 异质结。
Graphene-β-Ga O Heterojunction for Highly Sensitive Deep UV Photodetector Application.
机构信息
School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
出版信息
Adv Mater. 2016 Dec;28(48):10725-10731. doi: 10.1002/adma.201604049. Epub 2016 Oct 17.
PMID:27748975
Abstract
A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga O ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
摘要
深紫外光光电探测器是通过在β-氧化镓（β-Ga2O3）晶圆上沉积多层石墨烯制成的。光电分析表明，该异质结器件对波长大于 280nm 的光照射几乎是不敏感的，但对 254nm 的光非常敏感，具有很好的稳定性和重现性。
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