Park Taejun, Park Sangbin, Park Joon Hui, Min Ji Young, Jung Yusup, Kyoung Sinsu, Kang Tai Young, Kim Kyunghwan, Rim You Seung, Hong Jeongsoo
Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Korea.
Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Nanomaterials (Basel). 2022 Aug 29;12(17):2983. doi: 10.3390/nano12172983.
In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an AgO/β-GaO heterojunction was fabricated by depositing a p-type AgO thin film onto an n-type β-GaO layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 °C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 °C, the as-fabricated device had a low leakage current of 4.24 × 10 A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 μW/cm light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 × 10 Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the AgO/β-GaO heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.
在本研究中，通过在n型β-GaO层上沉积p型AgO薄膜，制备了一种基于AgO/β-GaO异质结的高光响应自供电深紫外（DUV）光电探测器。研究了在0至400°C温度范围内退火后的器件特性。我们的深紫外器件表现出典型的整流特性。在300°C的退火温度下，制备的器件具有4.24×10 A的低漏电流、2.08的理想因子和1.12 eV的势垒高度。此外，在零偏压下，在254 nm波长、100 μW/cm的光强下获得了12.87 mA/W的高光响应率，探测率为2.70×10琼斯，上升和下降时间分别为29.76、46.73 ms。基于这些结果，AgO/β-GaO异质结光电探测器无需外部施加电压即可工作，且具有高响应率，这将有助于提高紫外传感系统的性能。
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