室温下半导体单壁碳纳米管中的大正磁电阻
Large positive magnetoresistance in semiconducting single-walled carbon nanotubes at room temperature.
作者信息
Nshimiyimana Jean Pierre, Zhang Jian, Chi Xiannian, Hu Xiao, Wu Pei, Liu Siyu, Liu Jia, Chu Weiguo, Sun Lianfeng
机构信息
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology Beijing 100190 China
University of Chinese Academy of Sciences Beijing 100049 China.
出版信息
RSC Adv. 2018 Mar 13;8(19):10179-10184. doi: 10.1039/c8ra00877a.
We have investigated the effect of a magnetic field on the resistance (magnetoresistance, MR) of single-walled carbon nanotube (SWNT) arrays. The SWNT devices consist of a mixture of metallic and semiconducting SWNTs between palladium electrodes. The MR of the devices is studied at room temperature and in the presence of perpendicular magnetic fields up to 0.24 tesla. The resistance increases as the external magnetic field becomes higher, suggesting a positive MR of SWNTs. After etching the metallic SWNTs by electrical breakdown, the MR can be further enhanced. Large positive MR values about 15%, 20% and 25% were found in three different devices at 0.24 tesla for semiconducting SWNTs at room temperature. Our results show potential for the development of magneto-electronic devices that are operable at room temperature.
我们研究了磁场对单壁碳纳米管（SWNT）阵列电阻（磁阻，MR）的影响。SWNT器件由钯电极之间的金属性和半导体性SWNT混合物组成。在室温以及高达0.24特斯拉的垂直磁场存在的情况下研究了器件的磁阻。随着外部磁场增强，电阻增加，表明SWNT具有正磁阻。通过电击穿蚀刻掉金属性SWNT后，磁阻可以进一步增强。在室温下，对于半导体性SWNT，在0.24特斯拉时，在三个不同的器件中发现了约15%、20%和25%的大的正磁阻值。我们的结果显示了开发在室温下可操作的磁电子器件的潜力。
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