Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
ACS Nano. 2016 Feb 23;10(2):2975-81. doi: 10.1021/acsnano.6b00353. Epub 2016 Feb 1.
The outstanding electronic properties of single wall carbon nanotubes (SWCNTs) have made them prime candidates for future nanoelectronics technologies. One of the main obstacles to the implementation of advanced SWCNT electronics to date is the inability to arrange them in a manner suitable for complex circuits. Directed assembly of SWCNT segments onto lithographically patterned and chemically functionalized substrates is a promising way to organize SWCNTs in topologies that are amenable to integration for advanced applications, but the placement and orientational control required have not yet been demonstrated. We have developed a technique for assembling length sorted and chirality monodisperse DNA-wrapped SWCNT segments on hydrophilic lines patterned on a passivated oxidized silicon substrate. Placement of individual SWCNT segments at predetermined locations was achieved with nanometer accuracy. Three terminal electronic devices, consisting of a single SWCNT segment placed either beneath or on top of metallic source/drain electrodes were fabricated. Devices made with semiconducting nanotubes behaved as typical p-type field effect transistors (FETs), whereas devices made with metallic nanotubes had a finite resistance with little or no gate modulation. This scalable, high resolution approach represents an important step forward toward the potential implementation of complex SWCNT devices and circuits.
单壁碳纳米管（SWCNT）出色的电子性能使它们成为未来纳米电子技术的首选材料。迄今为止，将先进的 SWCNT 电子器件付诸实际应用的主要障碍之一是无法以适合复杂电路的方式对其进行排列。将 SWCNT 段定向组装到光刻图案化和化学功能化的衬底上，是一种将 SWCNT 组织成适合高级应用的拓扑结构的有前途的方法，但所需的位置和定向控制尚未得到证明。我们已经开发了一种在钝化氧化硅衬底上图案化的亲水线上组装长度分类和手性单分散 DNA 包裹的 SWCNT 段的技术。通过纳米级精度实现了将单个 SWCNT 段放置在预定位置。制造了由单个 SWCNT 段置于金属源/漏电极下方或上方的三端电子器件。由半导体纳米管制成的器件表现为典型的 p 型场效应晶体管（FET），而由金属纳米管制成的器件具有有限的电阻，几乎没有或没有栅极调制。这种可扩展的、高分辨率方法是朝着潜在实现复杂 SWCNT 器件和电路迈出的重要一步。
