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采用离子液体的单步电沉积工艺来生长具有可调成分的高发光硅/稀土（铒、铽）薄膜。

Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition.

作者信息

Thomas Shibin, Mallet Jeremy, Rinnert Hervé, Molinari Michael

机构信息

Laboratoire de Recherche en Nanosciences, LRN EA4682, Université de Reims Champagne-Ardenne Campus Moulin de la Housse BP 1039 51687 Reims France

Université de Lorraine, Institut Jean Lamour UMR CNRS 7198 54506 Vandœuvre-lès-Nancy Cedex B.P. 70239 France.

出版信息

RSC Adv. 2018 Jan 19;8(7):3789-3797. doi: 10.1039/c7ra11051k. eCollection 2018 Jan 16.

DOI:10.1039/c7ra11051k
PMID:35542923
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9077673/
Abstract

A one-step method for the electrodeposition of silicon-erbium (Si/Er) and silicon-terbium (Si/Tb) thin films using room temperature ionic liquid (RTIL) has been successfully developed. By playing with the electrochemical parameters, the concentration of incorporated rare earth (RE) ions (Er and Tb) in the thin films can be tuned. The obtained thin films have been characterized by electron microscopy and composition analysis techniques. The structural quality of the obtained thin films is characterized by a uniform distribution of Si atoms and RE ions throughout the thickness. The study of the optical properties, carried out by photoluminescence (PL) spectroscopy, demonstrates the efficient optical activity of the films with typical Er and Tb luminescence at room temperature depending on the RE content. The deposition method described is a promising strategy for incorporating RE ions in semiconducting thin films to achieve materials for opto-electronic applications.

摘要

一种使用室温离子液体（RTIL）电沉积硅 - 铒（Si/Er）和硅 - 铽（Si/Tb）薄膜的一步法已成功开发出来。通过调整电化学参数，可以调节薄膜中掺入的稀土（RE）离子（Er和Tb）的浓度。所获得的薄膜已通过电子显微镜和成分分析技术进行了表征。所获得薄膜的结构质量表现为Si原子和RE离子在整个厚度上均匀分布。通过光致发光（PL）光谱进行的光学性质研究表明，根据RE含量，薄膜在室温下具有典型的Er和Tb发光，具有高效的光学活性。所描述的沉积方法是将RE离子掺入半导体薄膜以获得用于光电子应用材料的一种有前景的策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/f49b72a2f4e2/c7ra11051k-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/fccaa88158fd/c7ra11051k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/d20684ce906a/c7ra11051k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/93769d6ce87e/c7ra11051k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/dd94776478fb/c7ra11051k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/7e7e2bd55505/c7ra11051k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/f49b72a2f4e2/c7ra11051k-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/fccaa88158fd/c7ra11051k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/d20684ce906a/c7ra11051k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/93769d6ce87e/c7ra11051k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/dd94776478fb/c7ra11051k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/7e7e2bd55505/c7ra11051k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f161/9077673/f49b72a2f4e2/c7ra11051k-f6.jpg

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本文引用的文献

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Sci Rep. 2017 Jul 20;7(1):5957. doi: 10.1038/s41598-017-06567-4.
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Multicolor light-emitting devices with TbO on silicon.基于硅衬底的掺铽多色发光器件。
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Electrodeposition of Si from an Ionic Liquid Bath at Room Temperature in the Presence of Water.室温下在水存在的情况下从离子液体浴中电沉积硅。
Langmuir. 2017 Feb 21;33(7):1599-1604. doi: 10.1021/acs.langmuir.6b03621. Epub 2017 Feb 8.
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Electrodeposition of silicon nanotubes at room temperature using ionic liquid.室温下使用离子液体电沉积硅纳米管。
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