Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
J Am Chem Soc. 2010 Mar 3;132(8):2498-9. doi: 10.1021/ja908521s.
p-Type ZnO microwires were first synthesized by a simple chemical vapor deposition method using Na as the dopant source. p-Type doping was confirmed by the electrical transport in single-wire field-effect transistors and low-temperature photoluminescence. The carrier mobility of the microwires was estimated to be approximately 2.1 cm(2) V(-1) S(-1).
p 型 ZnO 微米线首先通过一种简单的化学气相沉积方法，使用 Na 作为掺杂源合成。通过单根线场效应晶体管的输运特性和低温光致发光证实了 p 型掺杂。微米线的载流子迁移率估计约为 2.1 cm(2) V(-1) S(-1)。
