n-ZnO纳米线/p-金刚石异质结的电学输运特性改善
Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction.
作者信息
Sang Dandan, Wang Qingru, Wang Qinglin, Zhang Dong, Hu Haiquan, Wang Wenjun, Zhang Bingyuan, Fan Quli, Li Hongdong
机构信息
School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University Liaocheng 252059 China
Key Laboratory for Organic Electronics & Information Displays, Institute of Advanced Materials, Nanjing University of Posts & Telecommunications Nanjing 210046 China.
出版信息
RSC Adv. 2018 Aug 13;8(50):28804-28809. doi: 10.1039/c8ra03546f. eCollection 2018 Aug 7.
A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved - characteristics and relatively high performance for the electrical transport properties.
制备了n-ZnO纳米线（NW）/p-B掺杂金刚石（BDD）异质结。观察到具有低值开启电压（0.8 V）的整流行为。5 V时的正向电流比大直径n-ZnO纳米棒（NR）/p-BDD异质结的正向电流高12倍。在各种偏置电压下研究了n-ZnO NWs/p-BDD和n-ZnO NRs/p-BDD异质结的电输运行为比较。基于所提出的平衡能带图分析了ZnO NWs/BDD的载流子注入过程机制。ZnO NWs/BDD异质结在电输运性能方面表现出改善的特性和相对较高的性能。
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