n 型掺铝氧化锌纳米棒/ p 型掺硼金刚石异质结的光致发光和电学性能增强。

Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction.

机构信息

Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.

Key Laboratory of Advanced Structural Materials Ministry of Education, School of Materials Science and Engineering, Changchun University of Technology, Changchun 130012, China.

出版信息

Int J Mol Sci. 2022 Mar 30;23(7):3831. doi: 10.3390/ijms23073831.

The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heterojunction. The current voltage () characteristics exhibit excellent rectifying behavior with a high rectification ratio of 838 at 5 V. The n-Al:ZnO NRs/p-BDD heterojunction shows a minimum turn-on voltage (0.27 V) and reverse leakage current (0.077 μA). The forward current of the n-Al:ZnO NRs/p-BDD heterojunction is more than 1300 times than that of the n-ZnO NRs/p-BDD heterojunction at 5 V. The ideality factor and the barrier height of the Al-doped device were found to decrease. The electrical transport behavior and carrier injection process of the n-Al:ZnO NRs/p-BDD heterojunction were analyzed through the equilibrium energy band diagrams and semiconductor theoretical models.

水热法被用来制备 n-铝掺杂氧化锌纳米棒/ p-B 掺杂金刚石（n-Al: ZnO NRs/ p-BDD）异质结。与 n-ZnO NRs/ p-BDD 异质结相比，它表现出显著增强的光致发光（PL）强度和紫外发射峰的蓝移。电流-电压（I-V）特性表现出优异的整流行为，在 5 V 时具有 838 的高整流比。n-Al: ZnO NRs/ p-BDD 异质结表现出最小的开启电压（0.27 V）和反向漏电流（0.077 μA）。在 5 V 时，n-Al: ZnO NRs/ p-BDD 异质结的正向电流比 n-ZnO NRs/ p-BDD 异质结高 1300 多倍。发现掺杂器件的理想因子和势垒高度降低。通过平衡能带图和半导体理论模型分析了 n-Al: ZnO NRs/ p-BDD 异质结的电子输运行为和载流子注入过程。