Matussin Shaidatul Najihah, Rahman Ashmalina, Khan Mohammad Mansoob
Chemical Sciences, Faculty of Science, Universiti Brunei Darussalam, Gadong, Brunei.
Front Chem. 2022 Apr 25;10:881518. doi: 10.3389/fchem.2022.881518. eCollection 2022.
The ideal methods for the preparation of semiconductors should be reproducible and possess the ability to control the morphology of the particles with monodispersity yields. Apart from that, it is also crucial to synthesize a large quantity of desired materials with good control of size, shape, morphology, crystallinity, composition, and surface chemistry at a reasonably low production cost. Metal oxides and chalcogenides with various morphologies and crystal structures have been obtained using different anion metal precursors (and/or different sulfur sources for chalcogenides in particular) through typical synthesis methods. Generally, spherical particles are obtained as it is thermodynamically favorable. However, by changing the anion precursor salts, the morphology of a semiconductor is influenced. Therefore, precursors having different anions show some effects on the final forms of a semiconductor. This review compiled and discussed the effects of anions (NO , Cl, SO , CHCOO, CH(CH)O, etc.) and different sources of S on the morphology and crystal structure of selected metal oxides and chalcogenides respectively.
制备半导体的理想方法应该具有可重复性，并且具备以单分散产率控制颗粒形态的能力。除此之外，以合理的低生产成本大量合成尺寸、形状、形态、结晶度、组成和表面化学性质可控的所需材料也至关重要。通过典型的合成方法，使用不同的阴离子金属前驱体（特别是对于硫族化物，使用不同的硫源）已经获得了具有各种形态和晶体结构的金属氧化物和硫族化物。通常，由于热力学上有利，会得到球形颗粒。然而，通过改变阴离子前驱体盐，半导体的形态会受到影响。因此，具有不同阴离子的前驱体对半导体的最终形态会产生一些影响。本综述分别汇编并讨论了阴离子（NO 、Cl、SO 、CHCOO、CH(CH)O等）和不同硫源对所选金属氧化物和硫族化物的形态和晶体结构的影响。
