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用于开发具有定制功能参数的磁场传感器的铁镍基薄膜的高级表征

Advanced Characterization of FeNi-Based Films for the Development of Magnetic Field Sensors with Tailored Functional Parameters.

作者信息

Komogortsev Sergey V, Vazhenina Irina G, Kleshnina Sofya A, Iskhakov Rauf S, Lepalovskij Vladimir N, Pasynkova Anna A, Svalov Andrey V

机构信息

Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia.

Institute of Physics, Siberian Federal University, 660041 Krasnoyarsk, Russia.

出版信息

Sensors (Basel). 2022 Apr 26;22(9):3324. doi: 10.3390/s22093324.

Abstract

Magnetometry and ferromagnetic resonance are used to quantitatively study magnetic anisotropy with an easy axis both in the film plane and perpendicular to it. In the study of single-layer and multilayer permalloy films, it is demonstrated that these methods make it possible not only to investigate the average field of perpendicular and in-plane anisotropy, but also to characterize their inhomogeneity. It is shown that the quantitative data from direct integral and local measurements of magnetic anisotropy are consistent with the direct and indirect estimates based on processing of the magnetization curves. The possibility of estimating the perpendicular magnetic anisotropy constant from the width of stripe domains in a film in the transcritical state is demonstrated. The average in-plane magnetic anisotropy field of permalloy films prepared by magnetron sputtering onto a Corning glass is almost unchanged with the thickness of a single-layer film. The inhomogeneity of the perpendicular anisotropy field for a 500 nm film is greater than that for a 100 nm film, and for a multilayer film with a total permalloy thickness of 500 nm, it is greater than that for a homogeneous film of the same thickness.

摘要

磁力测定法和铁磁共振被用于定量研究薄膜平面内及垂直于该平面的易轴方向上的磁各向异性。在对单层和多层坡莫合金薄膜的研究中,结果表明这些方法不仅能够研究垂直及面内各向异性的平均场,还能够表征其不均匀性。结果显示,来自磁各向异性直接积分测量和局部测量的定量数据与基于磁化曲线处理的直接和间接估计结果一致。证明了从处于跨临界状态的薄膜中的条纹畴宽度估计垂直磁各向异性常数的可能性。通过磁控溅射制备在康宁玻璃上的坡莫合金薄膜的平均面内磁各向异性场几乎不随单层薄膜的厚度而变化。对于500nm的薄膜,垂直各向异性场的不均匀性大于100nm薄膜的不均匀性,并且对于总坡莫合金厚度为500nm的多层薄膜,其不均匀性大于相同厚度均匀薄膜的不均匀性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e60f/9101519/044ab18b1ec4/sensors-22-03324-g001.jpg

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