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通过腔体内的强光-物质耦合实现暗态单层半导体的发光增强。

Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity.

作者信息

Shan Hangyong, Iorsh Ivan, Han Bo, Rupprecht Christoph, Knopf Heiko, Eilenberger Falk, Esmann Martin, Yumigeta Kentaro, Watanabe Kenji, Taniguchi Takashi, Klembt Sebastian, Höfling Sven, Tongay Sefaattin, Antón-Solanas Carlos, Shelykh Ivan A, Schneider Christian

机构信息

Institute of Physics, Carl von Ossietzky University, Oldenburg, 26129, Germany.

Faculty of Physics, ITMO University, Saint-Petersburg, 197101, Russia.

出版信息

Nat Commun. 2022 May 30;13(1):3001. doi: 10.1038/s41467-022-30645-5.

Abstract

Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation.

摘要

通过强光-物质耦合来调控量子材料的性质是一个极具吸引力的研究方向,具有多种现代应用。这些应用包括改变有机分子中的电荷传输、引导粒子相关性和相互作用,甚至控制化学反应。在这里,我们研究通过强耦合对材料性质的调控,并展示了在具有自旋禁戒、光学暗基态的单层WSe中激子能带顺序的有效反转。在我们的实验中,我们利用腔光子与高能、自旋允许的亮激子之间的强光-物质耦合,从而在光学带隙中产生两个亮极化激元模式,其中较低的极化激元模式被推到WSe暗态之下。我们证明,在这种情况下,通常观察到的由于快速弛豫到暗基态而导致的发光猝灭被阻止,这导致了这种本征暗材料的变亮。我们通过温度相关的光致发光来探测这种有效的变亮,并发现与一个考虑了能带顺序反转和声子辅助极化激元弛豫的理论模型有很好的一致性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b68a/9151642/ebe2fd392626/41467_2022_30645_Fig1_HTML.jpg

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