• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

缓解III族氮化物μLED阵列发射波长不稳定性的简单方法

Simple Approach to Mitigate the Emission Wavelength Instability of III-Nitride μLED Arrays.

作者信息

Martinez de Arriba Guillem, Feng Peng, Xu Ce, Zhu Chenqi, Bai Jie, Wang Tao

机构信息

Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.

出版信息

ACS Photonics. 2022 Jun 15;9(6):2073-2078. doi: 10.1021/acsphotonics.2c00221. Epub 2022 May 27.

DOI:10.1021/acsphotonics.2c00221
PMID:35726243
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9204810/
Abstract

III-nitride semiconductors and their heterojunctions exhibit intrinsic polarization due to the asymmetry of their wurtzite structure, which determines all the fundamental properties of III-nitride optoelectronics. The intrinsic polarization-induced quantum-confined Stark effect leads to an emission wavelength shift with increasing injection current for III-nitride visible LEDs, forming an insurmountable barrier for the fabrication of a full color display. For instance, a yellow LED designed to produce yellow light emits green or blue light at an elevated current, while a green (blue) LED gives off blue (violet) light with increasing current. This color instability becomes a serious issue for a microdisplay such as the displays for augmented reality (AR)/virtual reality (VR) typically utilized at proximity to the eye, where human eyes are sensitive to a tiny change in light color. It is well-known that an optical mode wavelength for a microcavity is insensitive to injection current. In this work, we have demonstrated an approach to epitaxially integrating microLEDs (green microLEDs as an example, one of the key components for a full color microdisplay) and a microcavity. This allows the emission from the microLEDs to be coupled with the microcavity, leading to a negligible emission wavelength shift with increasing injection current. In contrast, identical microLEDs but without a microcavity show a large emission wavelength shift from 560 nm down to 510 nm, measured under identical conditions. This approach provides a simple solution to resolving the 30-year issue in the field of III-nitride optoelectronics.

摘要

由于纤锌矿结构的不对称性,III族氮化物半导体及其异质结表现出固有极化,这决定了III族氮化物光电子学的所有基本特性。固有极化诱导的量子限制斯塔克效应导致III族氮化物可见光发光二极管的发射波长随注入电流增加而发生偏移,这对全彩色显示器的制造形成了一个无法克服的障碍。例如,设计用于发出黄光的黄色发光二极管在电流升高时会发出绿光或蓝光,而绿色(蓝色)发光二极管随着电流增加会发出蓝色(紫色)光。这种颜色不稳定性对于诸如增强现实(AR)/虚拟现实(VR)显示器这类通常在人眼附近使用的微型显示器来说是一个严重问题,因为人眼对光颜色的微小变化很敏感。众所周知,微腔的光学模式波长对注入电流不敏感。在这项工作中,我们展示了一种将微型发光二极管(以绿色微型发光二极管为例,它是全彩色微型显示器的关键组件之一)和微腔进行外延集成的方法。这使得微型发光二极管的发射能够与微腔耦合,从而在注入电流增加时发射波长偏移可忽略不计。相比之下,在相同条件下测量,相同的但没有微腔的微型发光二极管显示出发射波长从560纳米大幅偏移至510纳米。这种方法为解决III族氮化物光电子学领域长达30年的问题提供了一个简单的解决方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0fa/9204810/035dbbf3757a/ph2c00221_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0fa/9204810/d0dddbaa5a3e/ph2c00221_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0fa/9204810/035dbbf3757a/ph2c00221_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0fa/9204810/d0dddbaa5a3e/ph2c00221_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0fa/9204810/035dbbf3757a/ph2c00221_0002.jpg

相似文献

1
Simple Approach to Mitigate the Emission Wavelength Instability of III-Nitride μLED Arrays.缓解III族氮化物μLED阵列发射波长不稳定性的简单方法
ACS Photonics. 2022 Jun 15;9(6):2073-2078. doi: 10.1021/acsphotonics.2c00221. Epub 2022 May 27.
2
Ultra-dense Green InGaN/GaN Nanoscale Pixels with High Luminescence Stability and Uniformity for Near-Eye Displays.用于近眼显示的具有高发光稳定性和均匀性的超密集绿色氮化铟镓/氮化镓纳米级像素。
ACS Nano. 2024 Oct 1;18(39):26882-26890. doi: 10.1021/acsnano.4c08224. Epub 2024 Sep 18.
3
A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission.一种实现具有红色发射的超小III族氮化物微发光二极管的简单方法。
ACS Appl Electron Mater. 2022 Jun 28;4(6):2787-2792. doi: 10.1021/acsaelm.2c00311. Epub 2022 May 18.
4
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering.在硅衬底上单片生长的氮化铟镓微发光二极管:通过极化和应变工程实现超稳定运行。
Light Sci Appl. 2022 Oct 10;11(1):294. doi: 10.1038/s41377-022-00985-4.
5
Spectrally Pure, High Operational Dynamic Range, Deep Red Micro-LEDs.光谱纯净、高工作动态范围、深红色微型发光二极管。
Nano Lett. 2024 Oct 7. doi: 10.1021/acs.nanolett.4c03262.
6
Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs.通过氮化铟镓(InGaN)蓝/绿双波长发光二极管与铝镓铟磷(AlGaInP)红色发光二极管的异质集成实现全彩微显示器。
Opt Express. 2022 Jun 20;30(13):23499-23510. doi: 10.1364/OE.459226.
7
Efficient Full-Color Boron Nitride Quantum Dots for Thermostable Flexible Displays.用于热稳定柔性显示器的高效全彩氮化硼量子点
ACS Nano. 2021 Sep 28;15(9):14610-14617. doi: 10.1021/acsnano.1c04321. Epub 2021 Jul 29.
8
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes.采用离子注入隧道结作为定义基于III族氮化物的微型发光二极管孔径的一种方法。
Opt Express. 2022 Jul 18;30(15):27004-27014. doi: 10.1364/OE.458950.
9
Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs.用于高效基于III族氮化物的深紫外微发光二极管的双偏振
Sci Rep. 2024 Aug 2;14(1):17961. doi: 10.1038/s41598-024-69146-4.
10
Experimental investigation of high-speed WDM-visible light communication using blue, green, and red InGaN µLEDs.使用蓝色、绿色和红色氮化铟镓微发光二极管的高速波分复用可见光通信的实验研究。
Opt Lett. 2024 Aug 15;49(16):4697-4700. doi: 10.1364/OL.521996.

引用本文的文献

1
Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission.用于长波长发光的超薄氮化铟/氮化镓超晶格的材料设计
Micromachines (Basel). 2024 Mar 1;15(3):361. doi: 10.3390/mi15030361.
2
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering.在硅衬底上单片生长的氮化铟镓微发光二极管:通过极化和应变工程实现超稳定运行。
Light Sci Appl. 2022 Oct 10;11(1):294. doi: 10.1038/s41377-022-00985-4.

本文引用的文献

1
Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.由原子级薄晶体管矩阵驱动的三维整体式微型发光二极管显示器。
Nat Nanotechnol. 2021 Nov;16(11):1231-1236. doi: 10.1038/s41565-021-00966-5. Epub 2021 Sep 9.
2
Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width.具有窄光谱线宽的超小、超紧凑和超高效氮化铟镓微发光二极管(μLED)
ACS Nano. 2020 Jun 23;14(6):6906-6911. doi: 10.1021/acsnano.0c01180. Epub 2020 May 29.
3
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs).
一种实现超小且超亮的氮化铟镓微发光二极管(μLED)的直接外延方法。
ACS Photonics. 2020 Feb 19;7(2):411-415. doi: 10.1021/acsphotonics.9b01351. Epub 2020 Jan 10.
4
Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors.采用电化学蚀刻纳米多孔AlGaN分布布拉格反射器的性能增强型365 nm紫外发光二极管。
Nanomaterials (Basel). 2019 Jun 6;9(6):862. doi: 10.3390/nano9060862.
5
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.应变弛豫对采用溅射AlN成核层在4英寸蓝宝石衬底上生长的InGaN/GaN绿色发光二极管性能的影响。
Sci Rep. 2019 Mar 5;9(1):3447. doi: 10.1038/s41598-019-40120-9.
6
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors.具有多孔 AlGaN 反射镜的紫外 GaN 发光二极管。
Sci Rep. 2017 Jul 10;7(1):4968. doi: 10.1038/s41598-017-05391-0.
7
InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.具有嵌入式纳米多孔 GaN 分布式布拉格反射器的 InGaN 发光二极管。
Sci Rep. 2016 Jul 1;6:29138. doi: 10.1038/srep29138.
8
Laser beams and resonators.激光束与谐振器。
Appl Opt. 1966 Oct 1;5(10):1550-67. doi: 10.1364/AO.5.001550.