Bai Jie, Cai Yuefei, Feng Peng, Fletcher Peter, Zhao Xuanming, Zhu Chenqi, Wang Tao
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom.
ACS Photonics. 2020 Feb 19;7(2):411-415. doi: 10.1021/acsphotonics.9b01351. Epub 2020 Jan 10.
A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs) has been developed, leading to the demonstration of . The approach does not involve any dry-etching processes which are exclusively used by any current μLED fabrication approaches. As a result, our approach has entirely eliminated any damage induced during the dry-etching processes. Our green μLED array chips exhibit a record external quantum efficiency (EQE) of 6% at ∼515 nm in the green spectral region, although our measurements have been performed on bare chips which do not have any coating, passivation, epoxy, or reflector, which are generally used for standard LED packaging in order to enhance extraction efficiency. A high luminance of >10 cd/m has been obtained on the μLED array bare chips. Temperature-dependent measurements show that our μLED array structure exhibits an internal quantum efficiency (IQE) of 28%. It is worth highlighting that our epitaxial approach is fully compatible with any existing microdisplay fabrication techniques.
一种实现超小且超亮的氮化铟镓微发光二极管（μLED）的直接外延方法已被开发出来，从而实现了…… 该方法不涉及任何当前μLED制造方法所特有的干法蚀刻工艺。因此，我们的方法完全消除了干法蚀刻过程中产生的任何损伤。我们的绿色μLED阵列芯片在绿色光谱区域约515 nm处展现出创纪录的6%的外量子效率（EQE），尽管我们的测量是在没有任何涂层、钝化、环氧树脂或反射器的裸芯片上进行的，而这些通常用于标准LED封装以提高提取效率。在μLED阵列裸芯片上已获得大于10 cd/m的高亮度。温度相关测量表明，我们的μLED阵列结构展现出28%的内量子效率（IQE）。值得强调的是，我们的外延方法与任何现有的微显示器制造技术完全兼容。
