Moon Seokho, Kim Jiye, Park Jeonghyeon, Im Semi, Kim Jawon, Hwang Inyong, Kim Jong Kyu
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea.
Adv Mater. 2023 Jan;35(4):e2204161. doi: 10.1002/adma.202204161. Epub 2022 Dec 30.
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
六方氮化硼（h-BN）是一种绝缘的二维层状材料，由于其在光电子学、量子光学和电子学领域展现出的非凡特性，作为适用于各种应用的奇特材料平台，近来引起了人们极大的兴趣。在h-BN研究的早期阶段，由于其原子级平整的表面没有悬空键和带电杂质，且具有高导热性，它被探索用作其他二维材料的理想衬底和绝缘层。h-BN结构和光学特性的最新发现已将其潜在应用扩展到新兴的电子学和光子学领域。尽管h-BN具有间接带隙性质，但它表现出非常高效的深紫外波段边缘发射，以及在很宽波长范围内稳定的室温单光子发射，这显示出其在下一代光子学方面的巨大潜力。此外，h-BN正被广泛用作低能耗电子学的有源介质，包括非易失性电阻开关存储器、射频器件以及用于下一代电子学的低介电常数材料。
