Firmino Rita, Carlos Emanuel, Pinto Joana Vaz, Deuermeier Jonas, Martins Rodrigo, Fortunato Elvira, Barquinha Pedro, Branquinho Rita
CENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, Portugal.
Nanomaterials (Basel). 2022 Jun 23;12(13):2167. doi: 10.3390/nano12132167.
Indium oxide (InO)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped InO thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped InO when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10 Ω.cm, a mobility of 6.65 cm/V.s, and a carrier concentration of 1.72 × 10 cm. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 Ω.cm, a mobility of 21 cm/V.s, and a carrier concentration of 7.98 × 10 cm, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.
氧化铟（InO）基透明导电氧化物（TCO）已被广泛应用于各种领域并得到研究，例如光电器件。然而，这种氧化物的一些更有前景的掺杂剂（锆、铪和钽）并未受到太多关注，因为研究主要集中在锡和锌上，而且通过溶液法探索的更少。这项工作专注于开发通过溶液燃烧法制备的铪（Hf）掺杂InO薄膜，并使用对环境影响较小的溶剂评估不同退火参数对TCO性能的影响。当在400°C下制备时，0.5M% Hf掺杂的InO实现了优化的TCO，在光谱的可见光范围内显示出高透明度，体电阻率为5.73×10Ω·cm，迁移率为6.65 cm²/V·s，载流子浓度为1.72×10 cm⁻³。然后，通过在600°C下进行10分钟的快速热退火（RTA），这些结果得到了改善，在空气中体电阻率达到3.95×10Ω·cm，迁移率为21 cm²/V·s，载流子浓度为7.98×10 cm⁻³。目前的工作使基于溶液的TCO更接近低成本光电子应用。
