State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Nat Nanotechnol. 2021 Aug;16(8):874-881. doi: 10.1038/s41565-021-00921-4. Epub 2021 Jun 3.
Flash memory has become a ubiquitous solid-state memory device widely used in portable digital devices, computers and enterprise applications. The development of the information age has demanded improvements in memory speed and retention performance. Here we demonstrate an ultrafast non-volatile flash memory based on MoS/hBN/multilayer graphene van der Waals heterostructures, which achieves an ultrafast writing/erasing speed of 20 ns through two-triangle-barrier modified Fowler-Nordheim tunnelling. Using detailed theoretical analysis and experimental verification, we postulate that a suitable barrier height, gate coupling ratio and clean interface are the main reasons for the breakthrough writing/erasing speed of our flash memory devices. Because of its non-volatility this ultrafast flash memory could provide the foundation for the next generation of high-speed non-volatile memory.
闪存已成为一种无处不在的固态存储设备，广泛应用于便携式数字设备、计算机和企业应用中。信息时代的发展要求提高内存速度和保持性能。在这里，我们展示了一种基于 MoS/hBN/多层石墨烯范德华异质结构的超快非易失性闪存，通过修改后的三角势垒 Fowler-Nordheim 隧穿实现了超快的写入/擦除速度 20ns。通过详细的理论分析和实验验证，我们假设合适的势垒高度、栅极耦合比和清洁界面是我们闪存器件突破写入/擦除速度的主要原因。由于其非易失性，这种超快闪存可以为下一代高速非易失性存储器提供基础。
