• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

通过物理气相传输法优化150毫米碳化硅晶体生长的热场

Optimization of thermal field of 150 mm SiC crystal growth by PVT method.

作者信息

Zhang Shengtao, Fan Guofeng, Li Tie, Zhao Lili

机构信息

Harbin Institute of Technology, School of Chemistry and Chemical Engineering Heilongjiang 150001 China

Soft-Impact China (Harbin), Ltd Heilongjiang 150028 China.

出版信息

RSC Adv. 2022 Jul 8;12(31):19936-19945. doi: 10.1039/d2ra02875a. eCollection 2022 Jul 6.

DOI:10.1039/d2ra02875a
PMID:35865196
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9264332/
Abstract

The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical fields in the growth process were modeled and studied with the help of the numerical simulation software Virtual Reactor, and its accuracy was verified by the agreement between morphology of the experimental crystal and the simulation. Additionally, the effects of thermal insulation adjustment of crystal growth thermal fields, application of seed crystals with different diameters, and shelter structure on the crystal growth process were also studied. By optimizing the crystal growth conditions, a nearly flat and slightly convex crystal growth interface was obtained successfully in our lab. Crystal quality was significantly improved, and a 6-inch SiC crystal with single polytype, high quality and low defects was successfully prepared.

摘要

碳化硅作为一种电子材料具有优异的物理性能，这决定了其重要的应用前景，尤其是在新能源产业中，但高质量大尺寸材料的制备并非易事。因此，借助数值模拟软件Virtual Reactor对生长过程中的物理场进行了建模和研究，并通过实验晶体形态与模拟结果的一致性验证了其准确性。此外，还研究了晶体生长热场的保温调节、不同直径籽晶的应用以及遮蔽结构对晶体生长过程的影响。通过优化晶体生长条件，在我们实验室成功获得了近乎平坦且略呈凸形的晶体生长界面。晶体质量显著提高，成功制备出了具有单一多型、高质量且低缺陷的6英寸碳化硅晶体。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/3b7802ac6ce9/d2ra02875a-f17.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/386db0b1ffe8/d2ra02875a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/875e2c445f29/d2ra02875a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/f3d4211ed3cc/d2ra02875a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/0314b34bb249/d2ra02875a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/c8d8c45c6084/d2ra02875a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/524026a675d5/d2ra02875a-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/26ed98a65d5b/d2ra02875a-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/d2361bdef89e/d2ra02875a-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/dbb326ed006d/d2ra02875a-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/0dc7bc90cc2e/d2ra02875a-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/67d9626c9557/d2ra02875a-f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/853eb432732c/d2ra02875a-f12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/430ca0eaafcc/d2ra02875a-f13.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/c043f27649df/d2ra02875a-f14.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/c2fd75f1bc10/d2ra02875a-f15.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/d3f7b1e74a2e/d2ra02875a-f16.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/3b7802ac6ce9/d2ra02875a-f17.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/386db0b1ffe8/d2ra02875a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/875e2c445f29/d2ra02875a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/f3d4211ed3cc/d2ra02875a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/0314b34bb249/d2ra02875a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/c8d8c45c6084/d2ra02875a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/524026a675d5/d2ra02875a-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/26ed98a65d5b/d2ra02875a-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/d2361bdef89e/d2ra02875a-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/dbb326ed006d/d2ra02875a-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/0dc7bc90cc2e/d2ra02875a-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/67d9626c9557/d2ra02875a-f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/853eb432732c/d2ra02875a-f12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/430ca0eaafcc/d2ra02875a-f13.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/c043f27649df/d2ra02875a-f14.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/c2fd75f1bc10/d2ra02875a-f15.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/d3f7b1e74a2e/d2ra02875a-f16.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/578f/9264332/3b7802ac6ce9/d2ra02875a-f17.jpg

相似文献

1
Optimization of thermal field of 150 mm SiC crystal growth by PVT method.通过物理气相传输法优化150毫米碳化硅晶体生长的热场
RSC Adv. 2022 Jul 8;12(31):19936-19945. doi: 10.1039/d2ra02875a. eCollection 2022 Jul 6.
2
Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth.用于PVT法8英寸碳化硅晶体生长的热场设计与优化
Materials (Basel). 2023 Jan 12;16(2):767. doi: 10.3390/ma16020767.
3
The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density.降低位错密度的8英寸碳化硅单晶的数值模拟与实验研究
Materials (Basel). 2024 May 7;17(10):2192. doi: 10.3390/ma17102192.
4
Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules.用于改善碳化硅晶锭物理气相传输生长过程条件的碳化硅粉末原料优化
Materials (Basel). 2019 Oct 8;12(19):3272. doi: 10.3390/ma12193272.
5
Study of Effect of Coil Movement on Growth Conditions of SiC Crystal.线圈运动对碳化硅晶体生长条件的影响研究
Materials (Basel). 2022 Dec 28;16(1):281. doi: 10.3390/ma16010281.
6
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process.机械应力和氮掺杂对4H-SiC物理气相传输生长过程初始阶段缺陷分布的影响
Materials (Basel). 2022 Mar 3;15(5):1897. doi: 10.3390/ma15051897.
7
Simulation and Experiment for Growth of High-Quality and Large-Size AlN Seed Crystals by Spontaneous Nucleation.高质量大尺寸AlN籽晶自发成核生长的模拟与实验
Sensors (Basel). 2020 Jul 15;20(14):3939. doi: 10.3390/s20143939.
8
Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC.4H-SiC在100毫米物理气相传输生长过程中的基面位错密度和热机械应力分析
Materials (Basel). 2019 Jul 9;12(13):2207. doi: 10.3390/ma12132207.
9
Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach.基于相场方法的3C-SiC在Si(111)微柱上的生长与合并
Materials (Basel). 2019 Oct 1;12(19):3223. doi: 10.3390/ma12193223.
10
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.使用SiC上的3C-SiC籽晶堆叠体进行块状(100) 3C-SiC气相生长过程中的限制因素。
Materials (Basel). 2019 Jul 24;12(15):2353. doi: 10.3390/ma12152353.

引用本文的文献

1
Thermal Field Simulation and Optimization for 8 in. SiC Crystal Growth via Novel Resistance Furnace Design.基于新型电阻炉设计的8英寸碳化硅晶体生长热场模拟与优化
ACS Omega. 2025 Aug 11;10(35):40492-40500. doi: 10.1021/acsomega.5c05911. eCollection 2025 Sep 9.
2
Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients.在高垂直温度梯度下使用物理气相传输法并以破碎的化学气相沉积碳化硅块生长碳化硅单晶
Materials (Basel). 2024 Nov 26;17(23):5789. doi: 10.3390/ma17235789.
3
Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth.
用于PVT法8英寸碳化硅晶体生长的热场设计与优化
Materials (Basel). 2023 Jan 12;16(2):767. doi: 10.3390/ma16020767.
4
Study of Effect of Coil Movement on Growth Conditions of SiC Crystal.线圈运动对碳化硅晶体生长条件的影响研究
Materials (Basel). 2022 Dec 28;16(1):281. doi: 10.3390/ma16010281.