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含四氟亚苯基的乙烯基苄基醚封端的聚(2,6-二甲基-1,4-亚苯基醚),具有更好的热性能、介电性能和阻燃性能,用于高频通信。

Tetrafluorophenylene-Containing Vinylbenzyl Ether-Terminated Oligo(2,6-dimethyl-1,4-phenylene ether) with Better Thermal, Dielectric, and Flame-Retardant Properties for Application in High-Frequency Communication.

作者信息

Chen Yi-Chun, Reddy Kamani Sudhir K, Lin Yu-An, Wang Meng-Wei, Lin Ching-Hsuan

机构信息

Advanced Research Center for Green Materials Science and Technology, National Taiwan University, 106, No. 1, Section 4, Roosevelt Road, Room 219, School of Engineering Complex, Taipei 10617, Taiwan.

Department of Chemical Engineering, National Chung Hsing University, No. 145, Xingda Road, South District, Taichung 40227, Taiwan.

出版信息

ACS Omega. 2022 Jul 22;7(30):26396-26406. doi: 10.1021/acsomega.2c02067. eCollection 2022 Aug 2.

DOI:10.1021/acsomega.2c02067
PMID:35936464
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9352225/
Abstract

In an integrated circuit, signal propagation loss is proportional to the frequency, dissipation factor ( ), and square root of dielectric constant ( ). The loss becomes obvious as we move to high-frequency communication. Therefore, a polymer having low and is critical for copper-clad laminates at higher frequencies. For this purpose, a 4-vinylbenzyl ether phenoxy-2,3,5,6-tetrafluorophenylene-terminated OPE (VT-OPE) resin was synthesized and its properties were compared with the thermoset of commercial OPE-2St resin. The thermoset of VT-OPE shows a higher (242 229 °C), a relatively high cross-linking density (1.59 1.41 mmole cm), a lower coefficient of thermal expansion (55 76 ppm/°C), better dielectric characteristic at 10 GHz ( values of 2.58 2.75, values of 0.005 0.006), lower water absorption (0.135 0.312 wt %), and better flame retardancy (UL-94 VTM-0 VTM-1 with dropping seriously) than the thermoset of OPE-2St. To verify the practicability of VT-OPE for copper-clad laminate, a laboratory process was also performed to prepare a copper-clad laminate, which shows a high peeling strength with copper foil (5.5 lb/in), high thermal reliability with a solder dipping test at 288 °C (>600 s), and the time for delamination of the laminate in thermal mechanical analysis (TMA) at 288 °C is over 60 min.

摘要

在集成电路中,信号传播损耗与频率、损耗因子( )以及介电常数的平方根( )成正比。随着我们转向高频通信,这种损耗变得明显。因此,对于高频覆铜板而言,具有低 和 的聚合物至关重要。为此,合成了一种4-乙烯基苄基醚苯氧基-2,3,5,6-四氟苯撑封端的OPE(VT-OPE)树脂,并将其性能与市售OPE-2St树脂的热固性材料进行了比较。VT-OPE的热固性材料显示出更高的 (242 229℃)、相对较高的交联密度(1.59 1.41毫摩尔/厘米)、较低的热膨胀系数(55 76 ppm/℃)、在10 GHz时更好的介电特性( 值为2.58 2.75, 值为0.005 0.006)、更低的吸水率(0.135 0.312重量%)以及比OPE-2St的热固性材料更好的阻燃性(UL-94 VTM-0 VTM-1且有严重滴落)。为了验证VT-OPE用于覆铜板的实用性,还进行了一个实验室工艺来制备覆铜板,该覆铜板与铜箔具有高剥离强度(5.5磅/英寸)、在288℃下进行浸焊测试时具有高热可靠性(>600秒),并且在288℃的热机械分析(TMA)中覆铜板分层的时间超过60分钟。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/21f75a226805/ao2c02067_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/1c259527b12d/ao2c02067_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/b66eeb2ed33c/ao2c02067_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/3f03d7b62695/ao2c02067_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/0350c000d9ce/ao2c02067_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/06b559874d9b/ao2c02067_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/98fc435aa853/ao2c02067_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/3a86cb11e512/ao2c02067_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/c371d6ffd1a8/ao2c02067_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/f4c901245f9f/ao2c02067_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/21f75a226805/ao2c02067_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/1c259527b12d/ao2c02067_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/b66eeb2ed33c/ao2c02067_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/3f03d7b62695/ao2c02067_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/0350c000d9ce/ao2c02067_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/06b559874d9b/ao2c02067_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/98fc435aa853/ao2c02067_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/3a86cb11e512/ao2c02067_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/c371d6ffd1a8/ao2c02067_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/f4c901245f9f/ao2c02067_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29b9/9352225/21f75a226805/ao2c02067_0007.jpg

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