Rajaji V, Manjón F J, Narayana Chandrabhas
University Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622 Villeurbanne, France.
Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India.
J Phys Condens Matter. 2022 Aug 23;34(42). doi: 10.1088/1361-648X/ac8906.
Research on topological and topological crystalline insulators (TCIs) is one of the most intense and exciting topics due to its fascinating fundamental science and potential technological applications. Pressure (strain) is one potential pathway to induce the non-trivial topological phases in some topologically trivial (normal) insulating or semiconducting materials. In the last ten years, there have been substantial theoretical and experimental efforts from condensed-matter scientists to characterize and understand pressure-induced topological quantum phase transitions (TQPTs). In particular, a promising enhancement of the thermoelectric performance through pressure-induced TQPT has been recently realized; thus evidencing the importance of this subject in society. Since the pressure effect can be mimicked by chemical doping or substitution in many cases, these results have opened a new route to develop more efficient materials for harvesting green energy at ambient conditions. Therefore, a detailed understanding of the mechanism of pressure-induced TQPTs in various classes of materials with spin-orbit interaction is crucial to improve their properties for technological implementations. Hence, this review focuses on the emerging area of pressure-induced TQPTs to provide a comprehensive understanding of this subject from both theoretical and experimental points of view. In particular, it covers the Raman signatures of detecting the topological transitions (under pressure), some of the important pressure-induced topological and TCIs of the various classes of spin-orbit coupling materials, and provide future research directions in this interesting field.
对拓扑绝缘体和拓扑晶体绝缘体（TCIs）的研究是最热门且令人兴奋的课题之一，因其具有迷人的基础科学和潜在的技术应用价值。压力（应变）是在一些拓扑平凡（普通）的绝缘或半导体材料中诱导非平凡拓扑相的一种潜在途径。在过去十年中，凝聚态物理学家在理论和实验方面都做出了大量努力，以表征和理解压力诱导的拓扑量子相变（TQPTs）。特别是，最近通过压力诱导的TQPT实现了热电性能的显著提升；这证明了该课题在社会中的重要性。由于在许多情况下压力效应可以通过化学掺杂或替代来模拟，这些结果为在环境条件下开发更高效的绿色能源收集材料开辟了一条新途径。因此，详细了解各类具有自旋轨道相互作用的材料中压力诱导TQPT的机制，对于改善其技术应用性能至关重要。因此，本综述聚焦于压力诱导TQPTs这一新兴领域，从理论和实验角度全面理解该课题。特别是，它涵盖了检测（压力下的）拓扑转变的拉曼特征、各类自旋轨道耦合材料中一些重要的压力诱导拓扑绝缘体和TCIs，并给出了这个有趣领域未来的研究方向。
