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全纹理、生产线兼容的单片钙钛矿/硅串联太阳能电池,效率接近29%。

Fully Textured, Production-Line Compatible Monolithic Perovskite/Silicon Tandem Solar Cells Approaching 29% Efficiency.

作者信息

Mao Lin, Yang Tian, Zhang Hao, Shi Jianhua, Hu Yuchao, Zeng Peng, Li Faming, Gong Jue, Fang Xiaoyu, Sun Yinqing, Liu Xiaochun, Du Junlin, Han Anjun, Zhang Liping, Liu Wenzhu, Meng Fanying, Cui Xudong, Liu Zhengxin, Liu Mingzhen

机构信息

School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China.

Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu, 610200, China.

出版信息

Adv Mater. 2022 Oct;34(40):e2206193. doi: 10.1002/adma.202206193. Epub 2022 Sep 4.

Abstract

Perovskite/silicon tandem solar cells are promising avenues for achieving high-performance photovoltaics with low costs. However, the highest certified efficiency of perovskite/silicon tandem devices based on economically matured silicon heterojunction technology (SHJ) with fully textured wafer is only 25.2% due to incompatibility between the limitation of fabrication technology which is not compatible with the production-line silicon wafer. Here, a molecular-level nanotechnology is developed by designing NiO /2PACz ([2-(9H-carbazol-9-yl) ethyl]phosphonic acid) as an ultrathin hybrid hole transport layer (HTL) above indium tin oxide (ITO) recombination junction, to serve as a vital pivot for achieving a conformal deposition of high-quality perovskite layer on top. The NiO interlayer facilitates a uniform self-assembly of 2PACz molecules onto the fully textured surface, thus avoiding direct contact between ITO and perovskite top-cell for a minimal shunt loss. As a result of such interfacial engineering, the fully textured perovskite/silicon tandem cells obtain a certified efficiency of 28.84% on a 1.2-cm masked area, which is the highest performance to date based on the fully textured, production-line compatible SHJ. This work advances commercially promising photovoltaics with high performance and low costs by adopting a meticulously designed HTL/perovskite interface.

摘要

钙钛矿/硅串联太阳能电池是实现低成本高性能光伏的有前景的途径。然而,基于经济上成熟的具有全纹理化晶圆的硅异质结技术(SHJ)的钙钛矿/硅串联器件,由于制造技术的限制与生产线硅晶圆不兼容,其最高认证效率仅为25.2%。在此,通过设计NiO /2PACz([2-(9H-咔唑-9-基)乙基]膦酸)作为氧化铟锡(ITO)复合结上方的超薄混合空穴传输层(HTL),开发了一种分子级纳米技术,以作为在顶部实现高质量钙钛矿层保形沉积的关键支点。NiO中间层有助于2PACz分子在全纹理化表面上均匀自组装,从而避免ITO与钙钛矿顶电池直接接触,以实现最小的分流损耗。由于这种界面工程,全纹理化的钙钛矿/硅串联电池在1.2平方厘米的掩膜面积上获得了28.84%的认证效率,这是基于全纹理化、与生产线兼容的SHJ的迄今为止的最高性能。这项工作通过采用精心设计的HTL/钙钛矿界面,推动了具有高性能和低成本的具有商业前景的光伏技术发展。

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