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功率转换效率达25.2%的全纹理单片钙钛矿/硅串联太阳能电池。

Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency.

作者信息

Sahli Florent, Werner Jérémie, Kamino Brett A, Bräuninger Matthias, Monnard Raphaël, Paviet-Salomon Bertrand, Barraud Loris, Ding Laura, Diaz Leon Juan J, Sacchetto Davide, Cattaneo Gianluca, Despeisse Matthieu, Boccard Mathieu, Nicolay Sylvain, Jeangros Quentin, Niesen Bjoern, Ballif Christophe

机构信息

Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT) Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Neuchâtel, Switzerland.

CSEM, PV-Center, Neuchâtel, Switzerland.

出版信息

Nat Mater. 2018 Sep;17(9):820-826. doi: 10.1038/s41563-018-0115-4. Epub 2018 Jun 11.

Abstract

Tandem devices combining perovskite and silicon solar cells are promising candidates to achieve power conversion efficiencies above 30% at reasonable costs. State-of-the-art monolithic two-terminal perovskite/silicon tandem devices have so far featured silicon bottom cells that are polished on their front side to be compatible with the perovskite fabrication process. This concession leads to higher potential production costs, higher reflection losses and non-ideal light trapping. To tackle this issue, we developed a top cell deposition process that achieves the conformal growth of multiple compounds with controlled optoelectronic properties directly on the micrometre-sized pyramids of textured monocrystalline silicon. Tandem devices featuring a silicon heterojunction cell and a nanocrystalline silicon recombination junction demonstrate a certified steady-state efficiency of 25.2%. Our optical design yields a current density of 19.5 mA cm thanks to the silicon pyramidal texture and suggests a path for the realization of 30% monolithic perovskite/silicon tandem devices.

摘要

将钙钛矿和硅太阳能电池结合的串联器件有望以合理成本实现超过30%的功率转换效率。迄今为止,最先进的单片双端钙钛矿/硅串联器件的底部硅电池正面经过抛光,以便与钙钛矿制造工艺兼容。这种让步导致更高的潜在生产成本、更高的反射损失和不理想的光捕获。为了解决这个问题,我们开发了一种顶电池沉积工艺,该工艺可直接在纹理化单晶硅的微米级金字塔上实现具有可控光电特性的多种化合物的保形生长。具有硅异质结电池和纳米晶硅复合结的串联器件展示了25.2%的认证稳态效率。由于硅金字塔纹理,我们的光学设计产生了19.5 mA cm的电流密度,并为实现30%的单片钙钛矿/硅串联器件指明了一条道路。

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