Magadeev Eugene, Vakhitov Robert, Sharafullin Ildus
Laboratory of Design of New Materials, Bashkir State University, 450076 Bashkortostan, Russia.
Entropy (Basel). 2022 Aug 11;24(8):1104. doi: 10.3390/e24081104.
The paper investigates the processes of the magnetization reversal of perforated ferromagnetic films with strong anisotropy of the easy-plane type. The investigations have shown that, influenced by a current impulse passing through an antidot, an inhomogeneous magnetic structure is formed, which is accompanied by the localization of a quasiparticle with the +1 topological charge on the antidot and by an emission of a quasiparticle with a -1 charge. It is established that this scenario of the film magnetization reversal underlies a reformation of its inhomogeneous structure also if two or four antidots are present in the film, irrespective of the fact of through which antidots and in which directions the currents are passed. The results of the research obtained by using two independent methods (solving the Landau-Lifshitz-Gilbert equations and analyzing the lattice model) demonstrated good agreement between the two. It is shown that a magnetic film comprising two or four antidots can be used as a memory cell for recording data in the ternary system.
本文研究了具有易平面型强各向异性的穿孔铁磁薄膜的磁化反转过程。研究表明，受通过反点的电流脉冲影响，会形成非均匀磁结构，这伴随着具有 +1 拓扑电荷的准粒子在反点上的局域化以及具有 -1 电荷的准粒子的发射。已确定，即使薄膜中有两个或四个反点，无论电流通过哪些反点以及沿哪个方向通过，这种薄膜磁化反转的情况也是其非均匀结构重构的基础。使用两种独立方法（求解朗道 - 里夫希茨 - 吉尔伯特方程和分析晶格模型）获得的研究结果表明两者之间具有良好的一致性。结果表明，包含两个或四个反点的磁性薄膜可作为用于在三元系统中记录数据的存储单元。
