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通过静电纺丝制备的光敏聚酰亚胺纤维膜的光刻制造在铝基板上形成纳米纤维图案。

Formation of Nano-Fibrous Patterns on Aluminum Substrates via Photolithographic Fabrication of Electrospun Photosensitive Polyimide Fibrous Membranes.

作者信息

Gao Yan-Shuang, Ren Xi, Du Xuan-Zhe, Wang Zhen-Zhong, He Zhi-Bin, Yuan Shun-Qi, Pan Zhen, Zhang Yan, Zhi Xin-Xin, Liu Jin-Gang

机构信息

Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China.

RAYITEK Hi-Tech Film Company, Co., Ltd., Shenzhen 518105, China.

出版信息

Nanomaterials (Basel). 2022 Aug 10;12(16):2745. doi: 10.3390/nano12162745.

Abstract

The formation of polymeric micro-patterns on various substrates via a photolithography procedure has been widely used in semiconductor fabrication. Standard polymer patterns are usually fabricated via photosensitive polymer varnishes, in which large amounts of potentially harmful solvents with weight ratios over 50 wt% have to be removed. In the current work, a novel pattern-formation methodology via solvent-free electrospun photosensitive polymeric fibrous membranes (NFMs) instead of the conventional photosensitive solutions as the starting photoresists was proposed and practiced. For this purpose, a series of preimidized negative auto-photosensitive polyimide (PSPI) resins were first prepared via the two-step chemical imidization procedure from the copolymerization reactions of 3,3',4,4'-benzophenonetetracarboxylic- dianhydride (BTDA) and two -methyl-substituted aromatic diamines, including 3,3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane (TMMDA) and 3,7-diamino-2,8-dimethyl- dibenzothiophene sulfone (TSN). The derived homopolymer PI-1 (BTDA-TMMDA) and the copolymers, including SPI-2SPI-6, with the molar ratio of 525% for TSN in the diamine units, showed good solubility in polar solvents. Then, a series of PSPI NFMs were fabricated via standard electrospinning procedure with the developed PSPI solutions in -dimethylacetamide (DMAc) with a solid content of 25 wt% as the starting materials. The derived PSPI NFMs showed good thermal stability with 5% weight loss temperatures higher than 500 °C in nitrogen. Meanwhile, the derived PSPIs showed good photosensitivity to the ultraviolet (UV) emitting wavelengths of i-line (365 nm), g-line (405 nm) and h-line (436 nm) of the high-pressure mercury lamps in both forms of transparent films and opaque NFMs. Fine micro-patterns with a line width of around 100 μm were directly obtained from the representative SPI-4 NFM via standard photolithography procedure.

摘要

通过光刻工艺在各种衬底上形成聚合物微图案已在半导体制造中广泛应用。标准聚合物图案通常通过光敏聚合物清漆制造,其中必须去除大量重量比超过50 wt%的潜在有害溶剂。在当前工作中,提出并实践了一种新颖的图案形成方法,即使用无溶剂电纺光敏聚合物纤维膜(NFM)代替传统的光敏溶液作为起始光刻胶。为此,首先通过两步化学亚胺化程序,由3,3',4,4'-二苯甲酮四羧酸二酐(BTDA)与两种甲基取代的芳香二胺(包括3,3',5,5'-四甲基-4,4'-二氨基二苯甲烷(TMMDA)和3,7-二氨基-2,8-二甲基二苯并噻吩砜(TSN))的共聚反应制备了一系列预亚胺化的负性自感光聚酰亚胺(PSPI)树脂。衍生的均聚物PI-1(BTDA-TMMDA)和二胺单元中TSN摩尔比为525%的共聚物(包括SPI-2SPI-6)在极性溶剂中表现出良好的溶解性。然后,以在N,N-二甲基乙酰胺(DMAc)中配制成固含量为25 wt%的已开发PSPI溶液为原料,通过标准电纺程序制备了一系列PSPI NFM。衍生的PSPI NFM在氮气中表现出良好的热稳定性,5%失重温度高于500℃。同时,衍生的PSPI在透明薄膜和不透明NFM两种形式下,对高压汞灯i线(365 nm)、g线(405 nm)和h线(436 nm)的紫外(UV)发射波长都表现出良好的光敏性。通过标准光刻工艺直接从代表性的SPI-4 NFM获得了线宽约为100μm的精细微图案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a91f/9413137/d7777cbcba3f/nanomaterials-12-02745-g001.jpg

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