Yamaguchi Yudai, Kanitani Yuya, Kudo Yoshihiro, Uzuhashi Jun, Ohkubo Tadakatsu, Hono Kazuhiro, Tomiya Shigetaka
R&D Center, Sony Group Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan.
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Nano Lett. 2022 Sep 14;22(17):6930-6935. doi: 10.1021/acs.nanolett.2c01479. Epub 2022 Sep 1.
The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.
利用相关透射电子显微镜（TEM）和原子探针断层扫描（APT）对InGaN/GaN多量子阱中的穿线位错（TDs）进行了成分和结构研究。对同一TD进行的相关TEM/APT分析表明，铟原子沿TD扩散，其浓度随距InGaN层的距离而降低。基于这些结果，我们直接观察到源自InGaN层的铟原子通过TD向外延GaN表面扩散，并且认为这是通过应变能弛豫诱导的管道扩散机制发生的。
