Haslinger M J, Mitteramskogler T, Kopp S, Leichtfried H, Messerschmidt M, Thesen M W, Mühlberger M
Functional Surfaces and Nanostructures, PROFACTOR GmbH, Steyr-Gleink 4407, Austria. Institute of Applied Physics, Johannes Kepler University, Linz 4040, Austria.
Nanotechnology. 2020 Aug 21;31(34):345301. doi: 10.1088/1361-6528/ab9130. Epub 2020 May 7.
In this work, we present a fabrication procedure of metal nanomesh arrays with the newly developed nanoimprint resist mr-NIL212FC used in a bi-layer resist system for a lift-off process. We comparatively analyzed and evaluated nanomeshes fabricated with a freshly prepared h-PDMS/PDMS stamp and a stamp used 501 times. Therefore, we first performed a step&repeat imprint test run in a self-built low cost step&repeat UV-NIL setup. We inspected the imprint behavior of the stamp, the UV-transmission through the stamp as well as stamp lifetime and stamp degradation with regard to the possible changes of its surface roughness. The nanomesh fabrication process is characterized by a good lift-off performance, leading to a low defect density of <1.26 defects 100 µm. Even after 501 imprints, only a negligible stamp degradation occurred without effecting the imprint performance. Likewise, the same holds true for the nanomeshes, which showed comparable low defect densities and feature sheet resistances of 3.54 ± 0.14 Ω/□ for the first and 3.48 ± 0.23 Ω/□ for the 501st nanomesh, respectively. AFM analyses further revealed that the maximum height of the roughness R changed over the course of the 501 imprints from 6.3 nm to 13.3 nm, representing <5% of the overall imprint height. In general, the mr-NIL212FC resist shows a good wettability and compatibility with standard h-PDMS/PDMS stamps, a fast curing behavior, a high replication fidelity, easy separation characteristics, and a very low diffusion of resist components into the stamp. The mr-NIL212FC resist allows exposure times as short as 2 s in the applied tool setup, enabling high throughput production. Moreover, all performed measurements indicate that a much higher number of imprints with one stamp seem possible.
在这项工作中，我们展示了一种金属纳米网阵列的制造工艺，该工艺采用了新开发的纳米压印抗蚀剂mr-NIL212FC，其用于双层抗蚀剂系统的剥离工艺。我们对使用新制备的h-PDMS/PDMS印章和使用了501次的印章制造的纳米网进行了比较分析和评估。因此，我们首先在自行搭建的低成本步进重复紫外纳米压印装置中进行了步进重复压印测试运行。我们检查了印章的压印行为、透过印章的紫外线传输情况以及印章寿命和印章降解情况，同时考虑了其表面粗糙度可能发生的变化。纳米网制造工艺具有良好的剥离性能，导致缺陷密度低至<1.26个缺陷/100 µm。即使经过501次压印，印章降解也可忽略不计，且不影响压印性能。同样，纳米网也是如此，其缺陷密度较低，第一张纳米网和第501张纳米网的方阻分别为3.54±0.14 Ω/□和3.48±0.23 Ω/□。原子力显微镜分析进一步表明，粗糙度R的最大高度在501次压印过程中从6.3 nm变化到13.3 nm，占总压印高度的<5%。总体而言，mr-NIL212FC抗蚀剂具有良好的润湿性，与标准h-PDMS/PDMS印章具有兼容性，固化速度快，复制保真度高，易于分离，且抗蚀剂成分向印章中的扩散非常低。在应用的工具设置中，mr-NIL212FC抗蚀剂的曝光时间可短至2 s，从而实现高通量生产。此外，所有进行的测量表明，使用一个印章进行更多次数的压印似乎是可能的。
