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通过化学浴沉积（CBD）技术合成的硫化镉（CdS）薄膜的成核与生长机制的深入分析。

An in-depth analysis of nucleation and growth mechanism of CdS thin film synthesized by chemical bath deposition (CBD) technique.

作者信息

Najm A S, Naeem Hasanain Salah, Majdi Hasan Sh, Hasbullah Siti Aishah, Hasan Hiba Ali, Sopian K, Bais Badariah, Al-Iessa Heidar J, Dhahad Hayder A, Ali Jamal M, Sultan Abbas J

机构信息

Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia.

Chemical Engineering Department, University of Technology, Baghdad, Iraq.

出版信息

Sci Rep. 2022 Sep 12;12(1):15295. doi: 10.1038/s41598-022-19340-z.

DOI:10.1038/s41598-022-19340-z
PMID:36096904
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9468032/
Abstract

The aim of this study is to acquire a deeper understanding of the response mechanism that is associated with the formation of CdS thin films. We presented an effective and new hybrid sensitisation technique, which involved the 1-step linker between the related chemical bath deposition (CBD) process and the traditional doping method during CBD for synthesising high-quality, CdS thin films. The mechanism for the combined synthesis of the films is also describes. CdS films were electrostatically bonded to soda-lime glass, causing the formation of the intermediate complexes [Cd(NH)], which aided in the collision of these complexes with a soda-lime glass slide. In the one-step fabrication technique, 3-Mercaptopropionic Acid (MPA) was employed as a second source of sulphur ions and a linker molecule. Optical studies showed that the bandgap ranged between (2.26-2.52) eV. CdS + MPA films exhibited a uniform distribution of spherical molecules based on their morphological properties. After annealing, this approach significantly altered the electrical characteristics of CdS films. The CdS + MPA films displayed the highest carrier concentration whereas the CdS + Ag + MPA films exhibited the lowest resistivity, with a jump of 3 orders of magnitude.

摘要

本研究的目的是更深入地了解与硫化镉（CdS）薄膜形成相关的响应机制。我们提出了一种有效且新颖的混合敏化技术，该技术在化学浴沉积（CBD）过程中，于传统掺杂方法的基础上，通过一步连接实现了高质量CdS薄膜的合成。文中还描述了薄膜联合合成的机制。CdS薄膜通过静电作用与钠钙玻璃结合，形成中间络合物[Cd(NH)]，这有助于这些络合物与钠钙玻璃载玻片发生碰撞。在一步制备技术中，3-巯基丙酸（MPA）被用作硫离子的第二来源和连接分子。光学研究表明，带隙范围在（2.26 - 2.52）eV之间。基于其形态特性，CdS + MPA薄膜呈现出球形分子的均匀分布。退火后，这种方法显著改变了CdS薄膜的电学特性。CdS + MPA薄膜显示出最高的载流子浓度，而CdS + Ag + MPA薄膜表现出最低的电阻率，电阻率跃升了3个数量级。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/cebe56510a0d/41598_2022_19340_Fig11_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/09e21be91cec/41598_2022_19340_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/76efec624dc0/41598_2022_19340_Fig3_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/34bbc2419123/41598_2022_19340_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/3315724e7a63/41598_2022_19340_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/9c17aadc7dec/41598_2022_19340_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/b5d3c86d534e/41598_2022_19340_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/408f504cfaea/41598_2022_19340_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/d72d8206b259/41598_2022_19340_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3462/9468032/cebe56510a0d/41598_2022_19340_Fig11_HTML.jpg

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